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Nanometer structure

Shi-Yun, Al, Jia-Qing, LI, Luo-Ping, II, Hui-Qi, Peng, Ya, Yang and Li-Tong, J. (2005), Electrochemical deposition and properties of nanometer-structure Ce-doped lead dioxide film electrode. Chin. J. Chem. 23 71-75. [Pg.95]

The particle sizes of Sn02 crystal in the samples can be calculated by well-known Scherrer formula from diffraction lines 110 (appeared at 26.6°). The particle sizes of electrodes prepared at 500°C, 600°C, and 700°C for 3 h were 8.5, 10.2, and 11.9nm, respectively. This data tells us that the electrodes process nanometer structure and Sn02 crystal of electrode surface does not reunite seriously. [Pg.337]

Lithography In order to precisely resolve the nanometer structures in microelectronics, various enhancement techniques have been applied to the current optical exposure tools that are equipped with deep UV light (193 nm wavelength). These enhancement techniques include phase-shift masks and immersion lenses (putting a liquid between final lens of the stepper and the wafer). The trade-off for the high resolution of modern steppers is an extremely small depth of focus (DOF) that is around 0.5pm over a typical field size of... [Pg.408]

It appears logical to direct attention initially to the most fundamental of electronic components, the conductor. Thus, the stabilization of molecular conductors at nanometer dimensions is one of the important and achievable goals in the area of molecular electronics. In this context, a major challenge is to achieve charge transfer with low fields (as in metallic wires), and to establish commimication with electrically separated nanometer structures. [Pg.297]

N.A. Burnham, G. Gremaud, A.J. Kuhk, P.J. Gallo, and F, Oulevey, Materials properties measurements Choosing the optimal scanning probe microscope configuration, J. Vac. Sci. Technol. B Microelectr. Nanometer Structures, 14(2), 1308-1312 (1996). [Pg.406]

M. X. Wan, Conducting Polymers with Micro or Nanometer Structure, Tsinghua University Press, Beijing and Springer-Verlag GmbH, Berlin, 2008. [Pg.702]

Kim, H. K S. H. Cho, Y. W. Ok, T. Y. Seong, and Y. S. Yoon. 2003. All solid-state rechargeable thin-fibn microsupercapacitor fabricated with tungsten cosputtered ruthenium oxide electrodes. Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures 21 949-952. [Pg.240]

Yue J. and Epstein A J., Conducting polymers with micro or nanometer structure,/ Chem. Soc. Chem. Commun., 1992,21,1540-1542. [Pg.269]

Maksimenko, S. A. Slepyan, G. Ya. (2004). Nanoelectromagnetics of low-dimensional structure. In Handbook of nanotechnology. Nanometer structure theory, modeling, and simulation. Bellingham SPIE Press, 145 p. [Pg.12]

Micromorphology discussed in terms of submicron-sized crystalline unit cells Thus, macromolecular Configuration belongs to the sub-nanometer structures... [Pg.1573]

Frost, M.R., Harrington, W.L., Downey, D.F., Walther, S.R. (1996) Surface metal contamination during ion implantation comparison of measurements by secondary ion mass spectroscopy, total reflection x-ray fluorescence spectrometry, and vapor phase decomposition used in conjunction with graphite furnace atomic absorption spectrometry and inductively coupled plasma mass spectrometry. Journal of Vacuum Science Technology B Microelectronics and Nanometer Structures, 14, 329— 335. [Pg.929]

Gu, C., Pivovarov, A., Garcia, R., Stevie, E, Griffis, D., Moran, I, Kulig, L., Richards, J.F. (2004) Secondary ion mass spectrometry backside analysis of barrier layers for copper diffusion. Journal of Vacuum Science Technology B Microelectronics and Nanometer Structures, 22,350-354. [Pg.934]

Thompson, K., Bunton, J.H., Kelly, T.F, Larson, D.I (2006) Characterization of ultralow-energy implants and towards the analysis of three-dimensional dopant distributions using three-dimensional atom-probe tomography. Journal of Vacuum Science Technology B.Microelectronics and Nanometer Structures, 24, 421-427. [Pg.940]

Chia, V.K.F., Mount, G.R., Edgell, M.I, Magee, C.W. (1999) Recent advances in secondary ion mass spectrometry to characterize ultralow energy ion implants./cuirnaZ of Vacuum Science < Technology B Microelectronics and Nanometer Structures, 17, 2345-2351. [Pg.942]

Czaplewski, D., Kameoka, J., and Craighead, H. G. Nonlithographic approach to nanostructure fabrication using a scanned electrospinning source. Journal of Vacuum Science Technology B (Microelectronics and Nanometer Structures), 21, 2994-2997 (2003). [Pg.207]

Journal of Vacuum Science C Technology B Microelectronics and Nanometer Structures, 22, 94. [Pg.273]

As has been discussed, the structure of a fiber network in a material is important since it affects the macroscopic properties of the material. Therefore, understanding the principles of fiber network formation in SMGs is necessary to the development of strategies to control the micro/nanometer structure in order to acquire materials with superior macroscopic properties. [Pg.84]


See other pages where Nanometer structure is mentioned: [Pg.6]    [Pg.140]    [Pg.193]    [Pg.143]    [Pg.55]    [Pg.268]    [Pg.269]    [Pg.215]    [Pg.4451]    [Pg.513]    [Pg.941]    [Pg.561]    [Pg.521]    [Pg.227]    [Pg.317]    [Pg.225]    [Pg.42]    [Pg.271]    [Pg.273]    [Pg.310]   
See also in sourсe #XX -- [ Pg.66 ]




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