Nano-optoelectronics

L. Pavesi, E. Buzaneva, Frontiers of Nano-Optoelectronics Systems, in NATO Science Series II. Mathematics, Physics and Chemistry, vol. 6, Kluwer Academic Publishers, Dordrecht, 2000. 

Wang, X.D., C.J. Summers and Z.L. Wang (2004b). Large-scale hexagonal-patterned growth of aligned ZnO nanorods for nano-optoelectronics and nanosensor arrays. Nano Letters, 4(3), 423 126. 

Pavesi, Lorenzo, and E. V. Buzaneva. Frontiers of Nano-Optoelectronic Systems. Boston Kluwer Academic Publishers, 2000. 

Finally, metal nanopartides are under investigation as elements in future electronic nanodevices they can be used as nanowires, nanoislands and as electron confinements in single electron tunneling devices [33-35]. Therefore, the fabrication of nanopartides with very well-defined sizes and surface properties is particularly important. Molecular films at particle surfaces are essential for specific interactions between nanopartides and macromolecules, between nanopartides and substrates and for the positioning of nanopartides inside nanodectrode arrangements. Nanopartides are also of interest for nano-optoelectronic appUcations due to their spedfic optical properties. For this purpose, the synthesis of nanopartides with very small distributions in chemical composition, size and shape in microreactors is under investigation. 

Nanodevices are systems with nanostructured materials that carry out specific functions with either improved performance or new attributes. Recent years have witnessed the emergence of new device paradigms based on nanostructured materials, including nanoelectronic devices, nano-optoelectronic devices, spintronic devices, nanosensors, and drug and gene delivery systems. 

Li, X. Jia, Y. Cao, A., Tailored single-walled carbon nanotube-Cds nanoparticle hybrids for tunable optoelectronic devices. ACS Nano 2009, 4, 506-512. 

Germanium nanocrystals embedded in a silicon-oxide matrix display blue luminescence, a desirable property for the development of optoelectronic devices. This has made Ge an interesting subject in recent nano-material study. 

Nano-composites for optoelectronics Sensors using zeolite thin films Stereo-selective polymerization Contrast enhancement in MRl (e.g. Gd-Y)... 

We have given an overview of the recent works on nanocomposites used for optoelectronic devices. From the review it is seen that a very rich publication has been issued regarding the nanostructured composites and nano-hybrid layers or heterojunctions which can be applied for different practical purposes. Among them there are organic light emitting diodes (OLED) and excitonic or organic solar cells (OSC). 

Potential applications of liquid crystalline templated polymer gels range from separation media (membranes, chromatography columns, or electrophoresis gels) to low dielectric constant insulators for microelectronic devices, to nano-structured optoelectronic devices, to catalysts supports, drug carriers, or materials for controlled release. 

AFM investigation of aluminum surface after anodic treatment was performed. It was shown that electropolishing in HCIO4 based solutions and long-time anodic oxidation result in formation of highly ordered nanorelief on the aluminum surface. Applications of such treatments in nano- and optoelectronics are discussed. 

Inhomogeneous media with micro- and nanosized structural features are known to strongly alter the character of various physical processes compared to common homogeneous materials. For example, photonic band gap (PBG) structures and metamaterials can be used for subwavelength light control [1]. Similarly, quantum heterostructures such as quantum dots and quantum wells have shown great promise in nano- and optoelectronics, as well as in quantum computing. 

Figure 3.6 Response of PmPV polymer-coated CVD-grown SWNT-FET device to UV light (A- = 365 nm). (A) The source-drain current (/sd) versus the gate voltage (Kg) of the device in air (Ksd = 1 V) at UV-off (blue curves) and UV-on (red curves) conditions. The reversible hysteresis (forward 7sd -reverse 7sd) in the device measured in the range of 20 V (-10 V to +10 V) at the sweep rate of 4 Hz. The inset shows the polymer-coated CVD-grown SWNT-FET device geometry. (B) Current (7sd) versus time response to UV illumination of PmPV-coated SWNT-FET device in air at room temperature (Fq = 4 V, Fsd = 1 V). The inset shows no apparent recovery in the device conductance after 16 h at fixed Fg conditions. Shaded and unshaded regions mark the UV-on and -off periods, respectively. Reprinted (adapted) with permission from Star, A. et al. Nanotube Optoelectronic Memory Devices. Nano Letters, 2004. 4(9) pp. 1587-1591. Copyright (2004) American Chemical Society.

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