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Models/modeling microelectronics processing

He has published over 200 papers in the fields of process control, optimization, and mathematical modeling of processes such as separations, combustion, and microelectronics processing. He is coauthor of Process Dynamics and Control, published by Wiley in 1989. Dr. Edgar was chairman of the CAST Division of AIChE in 1986, president of the CACHE Corporation from 1981 to 1984, and president of AIChE in 1997. [Pg.665]

Of these, the most extensive use is to identify adsorbed molecules and molecular intermediates on metal single-crystal surfaces. On these well-defined surfaces, a wealth of information can be gained about adlayers, including the nature of the surface chemical bond, molecular structural determination and geometrical orientation, evidence for surface-site specificity, and lateral (adsorbate-adsorbate) interactions. Adsorption and reaction processes in model studies relevant to heterogeneous catalysis, materials science, electrochemistry, and microelectronics device failure and fabrication have been studied by this technique. [Pg.443]

Simple chemical systems with several components (HCl, KOH, KCl in hydrogel) were used for modeling mass and charge balances coupled with equations for electric field, transport processes and equilibrium reactions [146]. This served for demonstrating the chemical systems function as electrolyte diodes and transistors, so-called electrolyte-microelectronics . [Pg.567]

Thin solid films of polymeric materials used in various microelectronic applications are usually commercially produced the spin coating deposition (SCD) process. This paper reports on a comprehensive theoretical study of the fundamental physical mechanisms of polymer thin film formation onto substrates by the SCD process. A mathematical model was used to predict the film thickness and film thickness uniformity as well as the effects of rheological properties, solvent evaporation, substrate surface topography and planarization phenomena. A theoretical expression is shown to provide a universal dimensionless correlation of dry film thickness data in terms of initial viscosity, angular speed, initial volume dispensed, time and two solvent evaporation parameters. [Pg.261]

Plasmas used in microelectronic device processing have many physicochemical characteristics in common with electrolytic systems, particularly in the use of electrochemical engineering methods for modeling transport and reaction processes. [Pg.27]

C.A. Mack, A. Stephanakis, and R. Herschel, Lumped parameter model of the photolithographic process, in Kodak Microelectronics Seminar Proc., pp. 228 238 (1986), R. Herschel and C.A. Mack, Lumped parameter model for optical lithography, in Lithography for VLSI, VLSI Electronics Microstructure Science, R.K. Watts and N.G. Einspruch, Eds., pp. 19 55, Academic Press, New York (1987) C.A. Mack, Enhanced lumped parameter model for photolithography, Proc. SPIE 2197, 501 510 (1994). [Pg.590]


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