Microwave electron cyclotron resonance

Ohshima et al. [138] have attempted to synthesize p-type ZnO by PLD using various codoping methods, including the ablation of ZnO Ga target in NO gas and Al and N codoping using an ion gun and a microwave electron cyclotron resonance source. Although they could identify the presence of Ga-N bonds in ZnO, p-type ZnO film could not obtained. 

Microwave discharges at pressures below 1 Pa witli low collision frequencies can be generated in tlie presence of a magnetic field B where tlie electrons rotate witli tlie electron cyclotron frequency. In a magnetic field of 875 G tlie rotational motion of tlie electrons is in resonance witli tlie microwaves of 2.45 GHz. In such low-pressure electron cyclotron resonance plasma sources collisions between tlie atoms, molecules and ions are reduced and the fonnation of unwanted particles in tlie plasma volume ( dusty plasma ) is largely avoided. 

A microwave plasma can also be produced by electron cyclotron resonance (ECR), through the proper combination of electric and magnetic fields.Cyclotron resonance is achieved when the frequency of the alternating electric field is made to match the natural frequency of the electrons orbiting the lines of force of the... 

Figure 5.19. Schematic of electron cyclotron resonance (ECR) microwave deposition apparatns.

For GaN-based semiconductor lasers with a stripe geometry, it is necessary to fabricate a smooth and vertical facet for the resonator, which has been reported by Saotome et al [32,33] and Itaya et al [34], The RIBE system used in this study has an electron cyclotron resonance (ECR) ion source, and ECR plasma is generated by introducing a 2.45 GHz microwave into a horizontal discharge chamber on... 

Table 11.1. Physical properties of hydrocarbon films deposited with a remote electron cyclotron resonance plasma from three different C2Hz source gases at three different dc self-bias voltages 1% np represents the parallel component of the real part of the refractive index as measured by in situ ellipsometry. The film composition is obtained from ion-beam analysis. The total particle number densities nc and n-H are calculated from the stoichiometry and the film thickness. Deposition parameters pressure p = 0.2 Pa adjusted with gas flow at constant pumping speed, absorbed microwave power density P = 10 kW nT3 [17]...

M. Komori, T. Maid, T. Kim, G. Hou, Y. Sakaguchi, K. Sakuta, and T. Kobayashi, Homoepitaxial growth of diamond thin films by electron cyclotron-resonance microwave plasma chemical-vapor-deposition apparatus with CO/H gaseous source, Appl. Phys. Lett., 62(6) 582-584 (1993)... 

To lower the deposition temperature, CVD processes enhanced by plasma [48-58] and laser [55-58] have been investigated. Low-resistivity (< 40 pQ cm) TiN was deposited by Akahori et al. [59] using TiCL in an electron-cyclotron resonance (ECR) plasma process (Ts b = 540°C, microwave power = 2.8 kW). All films had stoichiometric composition with low chlorine concentrations of 0.16 at. % as determined by ICP-MS. This indicates that the nitridation reaction of TiCU is enhanced enormously by the ECR plasma. 

ECR Electron Cyclotron Resonance Semiconductors, metals free electrons (low temperature) Microwave radiation in magnetic field 10- 30 GHz 5-10 kG Microwave absorption (at resonance) Bulk Elecironic energy bands, ettective masses 66... 

Figure 5- 9. Concentration ratio [C]/[CO] as a function of pressure, measured by means of (1) pressure defect and (2) by mass spectrometry, in experiments on complete CO2 dissociation in microwave discharge operating in conditions of electron cyclotron resonance (ECR).

Experiments with Complete CO2 Dissociation in Microwave Discharges Operating in Conditions of Electron Cyclotron Resonance... 

Figure 5-50. Translational temperature increase AJo during (1) the diseharge and (2) the discharge non-equilibrium degree Te/To as function of pressure in experiments with eomplete CO2 dissociation in microwave plasma in eonditions of electron cyclotron resonance (ECR).

Si (0 0 1) Electron cyclotron resonance microwave-plasma-assisted MBE 4.52 0.05 1992 [100]... 

By working principle, they can be classified as hot filament sources, ion sources based on Penning discharge (PIG), radio frequency (RF) and microwave (MW) ion sources, electron cyclotron resonance (ECR) ion sources, electron beam ion sources (EBIS, EBIT), laser ion sources, cusp and multicusp ion sources, sputtering ion sources. 

However, the nitrogen molecule has a r greater bonding energy than ammonia and is more difficult to dissociate into free atomic nitrogen active species. Consequently, the deposition rate is extremely slow. This can be offset by plasma activation at high frequency (13.56 MHz), by electron-cyclotron resonance (ECR), and with microwave activation. " ... 

A similar system has a dual ion-beam. A primary beam sputters carbon while the growing film is being simultaneously bombarded with argon ions generated from a second ion source.l l Another system is based on a microwave discharge generated by electron cyclotron resonance (ECR).0 IPo] ji g principle of ECR is described in Ch. 13, Sec. 3.3. 

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