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Metal oxide semiconductor based film

Metal oxide semiconductor field-effect transistors (MOSFETs) are field effect transistors with a thin film of silicon dioxide between the gate electrode and the semiconductor. The charge on the silicon dioxide controls the size of the depletion zone in the polype semiconductor. MOSFETs are easier to mass produce and are used in integrated circuits and microprocessors for computers and in amplifiers for cassette players. Traditionally, transistors have been silicon based but a recent development is field-effect transistors based on organic materials. [Pg.196]

Nevertheless, the first functional working TFT was demonstrated by Weimer in 1962 (Ref 2). He used thin films of polycrystalline cadmium sulfide, similar to those ones developed for photodetectors. The simplified structure is shown in Fig. 1(b). Other TFT semiconductor materials like CdSe, Te, InSb and Ge were investigated, but in the mid-1960 s the emergence of the metal oxide semiconductor field effect transistor (MOSFET) based on the crystalline silicon technology and the possibility to perform integrated circuits, led to a decline in TFT development activity by the end of the 1960s. [Pg.226]

It then addresses the micro-hotplates concept that has led to the development of different types of micromachined gas sensor devices. The different reahzations of micromachined semiconductor gas sensors are presented thin- and thick-film metal-oxide, field effect, and those using complementary metal-oxide semiconductors (CMOSs) and silicon-on-insulator (SOI) technologies. Finally, recent developments based on gas sensitive nanostructures, polymers, printing and foil-based technologies are highlighted. [Pg.220]

Electronic noses The so-called electronic noses consist of chemical gas sensors that are able to monitor changes in the offgas composition of fermentation processes. The different sensors of electronic noses are based on conductive polymers (CP), metal oxide semiconductors (MOS), metal oxide semiconductor field effect transistors (MOSFET), or quartz crystal microbalance (QCM). CP-based sensors use the electrochemical properties of polymers like polypyrrole or polyindole. The absorbance of selected molecules of the off-gas into the polymer film causes changes in the sensors conductivity. MOS sensors possess an electrochemically active surface of metal oxides like tin oxide or copper oxide. The sensitivity... [Pg.3903]


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Films metallic

Films semiconductor

Metal films

Metal oxide films

Metal-based oxidant

Oxidation base metal

Oxidation films

Oxide semiconductors

Semiconductor metals

Semiconductor oxidic

Semiconductors metallicity

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