Metal chalcogenide films

Phase-change materials (PCMs) represent another important application for metal chalcogenide films, as a result of emerging memory technologies, includ-... 

Milliron, D. I Mitzi, D. B. Copel, M. Murray, C. E. 2006. Solution-processed metal chalcogenide films for p-type transistors. Chem. Mater. 18 587-590. 

A novel CD technique used metallic A1 to reduce Se. Elemental Se and metallic A1 foil, together with ZnCE, were dissolved in NaOH solution and heated to 80°C in an autoclave with substrates of Teflon or alumina [145]. (Metal chalcogenide films have been chemically deposited onto Teflon in a number of reports.) It is notable that the films deposited onto alumina were reported to be 1.8 p,m thick— much thicker than ZnSe CD from other solutions. The films were sphalerite ZnSe... 

In the following, selected results will be presented on the conventional electrochemical synthesis of metal chalcogenide binary and ternary systems, conducted by employing variants of the methods outlined in the previous sections. A brief account of chemical bath deposition principles exemplified will be addressed at the end of this chapter, as being closely related to electrochemical deposition of thin films. 

Lokhande CD (1991) Chemical deposition of metal chalcogenide thin films. Mater Chem Phys 27 1-43... 

Precursors Towards Metal Chalcogenide Thin-Films and Quantum Dots... 

Particularly desirable among film deposition processes are solution-based techniques, because of the relative simplicity and potential economy of these approaches. However, the covalent character of the metal chalcogenides, which provides the benefit of the desired electronic properties (e.g., high electrical mobility), represents an important barrier for solution processing. Several methods have been developed to overcome the solubility problem, including spray deposition, bath-based techniques, and electrochemical routes, each of which will be discussed in later chapters. In this chapter, a very simple dimensional reduction approach will be considered as a means of achieving a convenient solution-based route to film deposition. 

Oxide and chalcogenide films are the primary materials that have been produced by the SILAR technique. A few metal films and films of other materials have also been produced. 

The first deposition experiments using SILAR were performed to grow zinc and cadmium chalcogenide films.1 Metal salt solutions and sodium sulfide were used as precursors in most experiments. Table 8.2 provides a more complete... 

Pathan, H. M. Lockhande, C. D. 2004. Deposition of metal chalcogenide thin films by successive ionic layer adsorption and reaction (SILAR) method. Bull. Mater. Sci. 27 85-111. 

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