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Mechanical silicon nitrides

Some ceramic materials are not found widely or at all in nature, and thus are synthesized for use. To prepare more complex ceramic compositions such as perovskites of general structural formula ABO3, and ferrites, of formula MFc204, the individual oxides or salts of the cations A, B, and M are often combined as powders and then reacted at high temperature by a solid-state diffusion mechanism. Silicon nitride (Si3N4) can be manufactured from either the nitridation of silicon metal or from the reaction of silicon tetrachloride with ammonia. Silicon carbide (SiC) is obtained from the reduction of silica with a carbon containing source. [Pg.419]

Creep Resistsince. Studies on creep resistance of particulate reinforced composites seem to indicate that such composites are less creep resistant than are monolithic matrices. Silicon nitride reinforced with 40 vol % TiN has been found to have a higher creep rate and a reduced creep strength compared to that of unreinforced silicon nitride. Further reduction in properties have been observed with an increase in the volume fraction of particles and a decrease in the particle size (20). Similar results have been found for SiC particulate reinforced silicon nitride (64). Poor creep behavior has been attributed to the presence of glassy phases in the composite, and removal of these from the microstmcture may improve the high temperature mechanical properties (64). [Pg.58]

In the sintering of such materials as silicon nitride, a silica-rich liquid phase is formed which remains in the sintered body as an intra-granular glass, but this phase, while leading to consolidation, can also lead to a deterioration in the high-temperature mechanical properties. [Pg.301]

A cross-sectional schematic of a monolithic gas sensor system featuring a microhotplate is shown in Fig. 2.2. Its fabrication relies on an industrial CMOS-process with subsequent micromachining steps. Diverse thin-film layers, which can be used for electrical insulation and passivation, are available in the CMOS-process. They are denoted dielectric layers and include several silicon-oxide layers such as the thermal field oxide, the contact oxide and the intermetal oxide as well as a silicon-nitride layer that serves as passivation. All these materials exhibit a characteristically low thermal conductivity, so that a membrane, which consists of only the dielectric layers, provides excellent thermal insulation between the bulk-silicon chip and a heated area. The heated area features a resistive heater, a temperature sensor, and the electrodes that contact the deposited sensitive metal oxide. An additional temperature sensor is integrated close to the circuitry on the bulk chip to monitor the overall chip temperature. The membrane is released by etching away the silicon underneath the dielectric layers. Depending on the micromachining procedure, it is possible to leave a silicon island underneath the heated area. Such an island can serve as a heat spreader and also mechanically stabihzes the membrane. The fabrication process will be explained in more detail in Chap 4. [Pg.11]

Most structural PMCs consist of a relatively soft matrix, such as a thermosetting plastic of polyester, phenolic, or epoxy, sometimes referred to as resin-matrix composites. Some typical polymers used as matrices in PMCs are listed in Table 1.28. The list of metals used in MMCs is much shorter. Aluminum, magnesium, titanium, and iron- and nickel-based alloys are the most common (see Table 1.29). These metals are typically utilized due to their combination of low density and good mechanical properties. Matrix materials for CMCs generally fall into fonr categories glass ceramics like lithium aluminosilicate oxide ceramics like aluminnm oxide (alnmina) and mullite nitride ceramics such as silicon nitride and carbide ceramics such as silicon carbide. [Pg.103]

The carbides and nitrides are well known for their hardness and strength, and this section will briefly compare a number of these properties with those of the pure metals. Concentration will be placed here on the first row compounds, since these constitute a complete series, and Mo and W, since these are the most commonly studied metals. As will be shown, the physical and mechanical properties of carbides and nitrides resemble those of ceramics not those of metals. Comparisons will be made with boron carbide (B4C), silicon carbide (SiC), aluminium nitride (AIN), silicon nitride (Si3N4), aluminium oxide (A1203), and diamond, as representative ceramic materials. [Pg.13]

NISTCERAM National Institute of Standards and Techology Gas Research Institute, Ceramics Division mechanical, physical, electrical, thermal, corrosive, and oxidation properties for alumina nitride, beryllia, boron nitride, silicon carbide, silicon nitride, and zirconia... [Pg.119]

Silicon nitride is prized for its hardness (9 out of 10 on the Mohr scale), its wear resistance, and its mechanical strength at elevated temperatures. It melts and dissociates into the elements at 1,900 °C, and has a maximum use temperature near 1,800 °C in the absence of oxygen and near 1,500 °C under oxidizing conditions.41 It also has a relatively low density (3.185 g/cm3). Unlike silicon carbide, silicon nitride is an electrical insulator. The bulk material has a relatively good stability to aggressive chemicals. This combination of properties underlies its uses in internal combustion engines and jet engines. [Pg.324]

Parr NL, Martin GF, May ERW (1960) Preparation, Microstructure and Mechanical Properties of Silicon Nitride. In Popper P (ed) Special Ceramics. Heywood, London, p 102... [Pg.148]

Lewis MH (1994) Crystallisation of Grain Boundary Phases in Silicon Nitride and SiAlON Ceramics. In Hoffmann MJ, Petzow G (eds) Tailoring of Mechanical Properties of Si3N4 Ceramics. NATO ASi Ser E 276, Kliiwer Academic Publishers, Dordrecht, p 217... [Pg.157]

Becher PF, Lin HAT, Hwang SL, Hoffmann MJ, Chen IW (1993) The influence of microstructure on the mechanical behavior of silicon nitride ceramics. In Chen IW, Becher P, Mitomo M, Petzow G, Yen TS (eds) Silicon Nitride Ceramics-Scientific and Technological Advances. MRS Symposium Proc 287, MRS Pittsburgh, p 147... [Pg.158]

Ricoult-Barkhausen M, Gogotsi YG (1996) Identification of Oxidation Mechanisms in Silicon Nitride Ceramics by TEM. In Fordham PJ, Baxter DJ, Graziani T (eds) Corrosion of Advanced Ceramics. Key Eng Mat 113. Trans Tech Publications, Switzerland, p 81... [Pg.161]

Trice, R.W., and Halloran, J.W. (2000), Elevated-temperature mechanical properties of silicon nitride/boron nitride fibrous monolithic ceramics , J. Am. Ceram. Soc., 83(2) 311-316. [Pg.30]

Trice, R.W. (1998), The Elevated Temperature Mechanical Properties of Silicon Nitride/Boron Nitride Fibrous Monoliths, PhD Thesis. University of Michigan, Ann Arbor, MI. [Pg.31]


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See also in sourсe #XX -- [ Pg.771 ]




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