Lithographic characterization

Lithographic Characterization. Electron-beam exposures were conducted on an EBES system operating at 20 kV, with a beam address and spot size both equal to 0.25 ym. Electron response parameters were evaluated using linewidth control patterns. P(SI-CMS) was spray developed after exposure using an APT Model 915 resist processor in toluene-methanol (1 1) for 30 sec followed by a methanol rinse for 45 sec. Aqueous solutions of tetramethylammonium hydroxide (TMAH, 25% in water, Fluka Inc.) were used for the novolac resist development. Exposed films were dip-developed for 20 sec. in TMAH-water (1 2.5) solutions. 

Bates et al. reported the construction and characterization of a gold nanoparticle wire assembled using Mg -dependent RNA-RNA interactions for the future assembly of practical nanocircuits [31]. They used magnesium ion-mediated RNA-RNA loop-receptor interactions, in conjunction with 15 nm or 30 nm gold nanoclusters derivatized with DNA to prepare self-assembled nanowires. A wire was deposited between lithographically fabricated nanoelectrodes and exhibited non-linear activated conduction by electron hopping at 150-300 K (Figure 16). 

Fluorescence Characterization of Ablated Polymeric Materials. In order to produce sharply etched patterns, the film was ablated with a photo-lithographically prepared mesh mask in the contact mode. The ablation was conducted with two laser shots with the laser fluence of 0.2 J/cm2. The decay curves of the ablated film was measured by a... 

Synthesis, Characterization and Lithographic Evaluation of Chlorinated Polymethylstyrene... 

The work reported in this paper concerns the synthesis of a series of chlorinated polymethylstyrenes, prepared by chlorination of both anionically and free radically synthesized polymethylstyrene, and their subsequent characterization by H NMR, 13C NMR, IR and elemental analysis. The preliminary lithographic evaluation of the chlorinated materials is also discussed. 

The surface characteristics of reworked substrates and several rework processes are described later in several tables and the discussion. The substrate condition following the rework process is characterized by the results of three tests ESCA or XPS [19] surface chemical composition spectra, actual lithographic resist pattern lift testing [2, 6], and water droplet contact angle measurement, 0HjO [3]. 

Inks that are printed by the flexo-graphic and gravure printing processes are characterized by their extremely fluid nature, and are generally termed liquid inks. When compared to the fluid nature of flexo-graphic and gravure inks, lithographic and letterpress inks are much more viscous and paste-like. 

We have successfully employed the trimethylsilylmethyl appendage to effect oxygen RIE resistance in both positive and negative acting electron-beam resist systems (10,11). The relatively compact nature of this substituent allows the preparation of glassy polymers useful for lithographic applications. The preparation and characterization of select trimethylsilylmethyl substituted resists will be presented in addition to a study of their radiation chemistry and lithographic properties. 

The microelectronics revolution is due, in part, to the advances in design and operation of the lithographic hardware. But the high-resolution devices that characterize this revolution would not have been possible were it not... 

There are numerous analytical and characterization steps in resist formulation and lithographic evaluation processes. First of all, each component of a resist formulation, polymer, acid generator, and additives, must be synthesized as... 

The comprehensive characterization of uitrathin resist (UTR) (<100 nm) processes in terms of defectivity, manufacturahility, and physical properties (structure, dynamics, stability, thermodynamic behavior, etc.) have been a central point of interest in semiconductor microlithography for quite some time. Despite many years of experimental and theoretical efforts along these lines, a number of basic questions still remain to be answered. One of these issues is the fundamental lower physical limit of the resist thickness, below which lithographic patterning is not viable. For resists based on the polyhydroxy styrene platform, this lower limit has been determined to be around 60 nm, with the onset of film instability occurring at around 55 nm. For a host of other resist platforms, this lower limit is yet to be determined. 

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