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Linear models resistivity values

The B score (Brideau et al., 2003) is a robust analog of the Z score after median polish it is more resistant to outliers and also more robust to row- and column-position related systematic errors (Table 14.1). The iterative median polish procedure followed by a smoothing algorithm over nearby plates is used to compute estimates for row and column (in addition to plate) effects that are subtracted from the measured value and then divided by the median absolute deviation (MAD) of the corrected measures to robustly standardize for the plate-to-plate variability of random noise. A similar approach uses a robust linear model to obtain robust estimates of row and column effects. After adjustment, the corrected measures are standardized by the scale estimate of the robust linear model fit to generate a Z statistic referred to as the R score (Wu, Liu, and Sui, 2008). In a related approach to detect and eliminate systematic position-dependent errors, the distribution of Z score-normalized data for each well position over a screening run or subset is fitted to a statistical model as a function of the plate the resulting trend is used to correct the data (Makarenkov et al., 2007). [Pg.249]

In addition to these ready-to-use thermometers, there also are available high-resolution, low-excitation power ac resistance bridges that can measure RTD resistances with moderately high accuracy (Berger et al., 1974). Such instruments cost about 2500. Since such instruments measure only a resistance value, the resistance—temperature (R vs. T) relationships for the RTD must be known accurately to allow the temperature value to be accurately known. An example of this type of instrument is the Model LR-110, available from Linear Research, Inc., San Diego, California. A number of handbooks provide a further discussion of more modern bridges. (Handbooks). [Pg.302]

In this case, the PEM operates like a linear ohmic resistance, with irreversible voltage losses t]pem = jolpEM/ p, where jo is the fuel cell current density. In reality, this behavior is only observed in the limit of small Jo- At normal current densities of fuel cell operation, y o l A cm , the electro-osmotic coupling between proton and water fluxes causes nonuniform water distributions, which lead to nonlinear effects in tipem. These deviations result in a critical current density Jpc, at which the increase in tipem incurs a dramatic decrease of the cell voltage. It is, thus, crucial to develop membrane models that could predict the value of Jpc on the basis of primary experimental data on structure and transport properties. [Pg.381]

If the actual blood flow differs significantly from Qo, the regulatory error can be large. Since a linear model is being employed here, the value of R predicted by Equation 14.4 to Equation 14.7 may fall outside of the physiological range. Thus, the time dependent value of Rg was limited to maximum and minimum values of 1.6Jiso and 0.4J so> respectively. These values correspond with maximal vasoconstriction and vasodilation. When the computations reveal that the limit has been reached, the Hmited value of resistance was then inserted into Equation 14.1 of the Windkessel model. Otherwise, the time dependent value obtained from Equation 14.7 was employed. [Pg.247]

Figure 11. Experimental and predicted differential conductance plots of the double-island device of Figure 10(b). (a) Differential conductance measured at 4.2 K four peaks are found per gate period. Above the threshold for the Coulomb blockade, the current can be described as linear with small oscillations superposed, which give the peaks in dljdVj s- The linear component corresponds to a resistance of 20 GQ. (b) Electrical modeling of the device. The silicon substrate acts as a common gate electrode for both islands, (c) Monte Carlo simulation of a stability plot for the double-island device at 4.2 K with capacitance values obtained from finite-element modeling Cq = 0.84aF (island-gate capacitance). Cm = 3.7aF (inter-island capacitance). Cl = 4.9 aF (lead-island capacitance) the left, middle and right tunnel junction resistances were, respectively, set to 0.1, 10 and 10 GQ to reproduce the experimental data. (Reprinted with permission from Ref [28], 2006, American Institute of Physics.)... Figure 11. Experimental and predicted differential conductance plots of the double-island device of Figure 10(b). (a) Differential conductance measured at 4.2 K four peaks are found per gate period. Above the threshold for the Coulomb blockade, the current can be described as linear with small oscillations superposed, which give the peaks in dljdVj s- The linear component corresponds to a resistance of 20 GQ. (b) Electrical modeling of the device. The silicon substrate acts as a common gate electrode for both islands, (c) Monte Carlo simulation of a stability plot for the double-island device at 4.2 K with capacitance values obtained from finite-element modeling Cq = 0.84aF (island-gate capacitance). Cm = 3.7aF (inter-island capacitance). Cl = 4.9 aF (lead-island capacitance) the left, middle and right tunnel junction resistances were, respectively, set to 0.1, 10 and 10 GQ to reproduce the experimental data. (Reprinted with permission from Ref [28], 2006, American Institute of Physics.)...
The pH (or pI) term of the Nemst equation contains the electrode slope factor as a linear temperature relationship. This means that a pH determination requires the instantaneous input, either manual or automatic, of the prevailing temperature value into the potentiometer. In the manual procedure the temperature compensation knob is previously set on the actual value. In the automatic procedure the adjustment is permanently achieved in direct connection with a temperature probe immersed in the solution close to the indicator electrode the probe usually consists of a Pt or Ni resistance thermometer or a thermistor normally based on an NTC resistor. An interesting development in 1980 was the Orion Model 611 pH meter, in which the pH electrode itself is used to sense the solution temperature (see below). [Pg.94]

Besides, if SHa — oo, then xa w=i.o = xAb This also corresponds to a negligible external mass transfer resistance. In both cases, that of a finite Sherwood number SHa or for SHa — oo, we get a two-point boundary value differential equation. For the nonlinear case this has to be solved numerically. However, as for the axial dispersion model, we will start out with the linear case that can be solved analytically. [Pg.302]

From the R and C values of the time constants a-c in the model, it was possible to estimate the thickness and resistivity of layers comprising the compact part of the surface films. The temperature dependence of these three time constants (e.g., linear Arrhenius plots for the different resistivities calculated that reflect different activation energy for Li+ ion migration in each layer), as well as their dependence on the solution composition and the experimental conditions, revealed that the model has a solid physicochemical ground [48,49,186],... [Pg.349]

These promising values leave room for performance loss due to deviation from the ideal behavior. The main contribution in the performance loss comes fi om neglecting the contact resistance, which arises between the metallic contacts and the carbon nanotube and is caused by k-vector mismatch and/or Schottky-barriers. In the following we model this resistance as linear, i.e. ohmic resistance and calculate the performance dependence on the contact resistance. The extrinsic transconductance can be calculated from the intrinsic transconductance g and the extrinsic output conductance gds and is given by ... [Pg.529]


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Resistance modeling

Resistant model

Resistivity values

Value model

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