Line width control

Such contradictory claims regarding the effectiveness of the dye in improving a line width control appear to reflect a complex interdependence of the various materials and processing parameters that is not adequately accounted for in the simulation programs. In general, dyed resists are believed to provide improved control of dimensions in lines printed over highly reflective substrates, and several vendors have made dyed resist formulations... 

There is a second relaxation process, called spin-spin (or transverse) relaxation, at a rate controlled by the spin-spin relaxation time T2. It governs the evolution of the xy magnetisation toward its equilibrium value, which is zero. In the fluid state with fast motion and extreme narrowing 7) and T2 are equal in the solid state with slow motion and full line broadening T2 becomes much shorter than 7). The so-called 180° pulse which inverts the spin population present immediately prior to the pulse is important for the accurate determination of T and the true T2 value. The spin-spin relaxation time calculated from the experimental line widths is called T2 the ideal NMR line shape is Lorentzian and its FWHH is controlled by T2. Unlike chemical shifts and spin-spin coupling constants, relaxation times are not directly related to molecular structure, but depend on molecular mobility. 

On an intermediate scale, smaller than the workpiece, but larger than the features, is a regime in the range of tens to hundreds of micrometers that is influenced by convection. This is the same size range in which convectively controlled fine structure is observed in pattern formation studies. In this regime, Debecker et al. [139] treated mass-transfer limited deposition on a set of lines in the presence of flow. They defined a Peclet number based on the line width L, the flow velocity U0 and the distance B between electrodes. 

The possibilities afforded by SAM-controlled electrochemical metal deposition were already demonstrated some time ago by Sondag-Huethorst et al. [36] who used patterned SAMs as templates to deposit metal structures with line widths below 100 nm. While this initial work illustrated the potential of SAM-controlled deposition on the nanometer scale further activities towards technological exploitation have been surprisingly moderate and mostly concerned with basic studies on metal deposition on uniform, alkane thiol-based SAMs [37-40] that have been extended in more recent years to aromatic thiols [41-43]. A major reason for the slow development of this area is that electrochemical metal deposition with, in principle, the advantage of better control via the electrochemical potential compared to none-lectrochemical methods such as electroless metal deposition or evaporation, is quite critical in conjunction with SAMs. Relying on their ability to act as barriers for charge transfer and particle diffusion, the minimization of defects in and control of the structural quality of SAMs are key to their performance and set the limits for their nanotechnological applications. 

The above data show that the spin labelling technique indeed allows one to control the random character and the uniformity of the spatial distribution of the additives in vitreous matrices. The criterion of random character and uniformity of distribution is the linear dependence of the EPR line width on the concentration of paramagnetic additives and the coincidence of the experimentally measured coefficients A in eqn. (2) with the theoretical value of A for such distribution. 

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