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Layers injection currents

Boundary layer models take a similar approach but attempt to extend the parameterization of gas exchange to individual micrometeorological processes including transfer of heat (solar radiation effects including the cool skin), momentum (friction, waves, bubble injection, current shear), and other effects such as rainfall and chemical enhancements arising from reaction with water. [Pg.164]

Fig. 11 shows the photoswitching of the injection current. Upon UV irradiation, the hole injection current increased, while decreasing to zero on irradiation with visible light. Very thin amorphous diarylethene film as thin as 0.2 pm could also control the hole injection to the organic hole transport layer (Fig. 9b). These results are potentially applicable to optical memory-type organic photoconductors. Fig. 11 shows the photoswitching of the injection current. Upon UV irradiation, the hole injection current increased, while decreasing to zero on irradiation with visible light. Very thin amorphous diarylethene film as thin as 0.2 pm could also control the hole injection to the organic hole transport layer (Fig. 9b). These results are potentially applicable to optical memory-type organic photoconductors.
As a result, nearly perfect interfaces between the ferromagnetic material and the semiconductor are not a prerequisite for efficient spin injection. It is for example possible to insert a non-magnetic seed layer between the ferromagnetic base layer and the semiconductor collector. Since hot electrons retain their spin moment while traversing the thin non-magnetic layer this will not drastically reduce the spin polarization of the injected current. Finally, since electron injection is ballistic in SVT and MTT devices the spin injection efficiency is not fundamentally limited by a substantial conductivity mismatch between metals and semiconductors [161, 162], The latter is the case in diffusive ferromagnetic metal/semiconductor contacts [163],... [Pg.449]

Figure 78 Thermionic injection current-field characteristics for the ITO/75% TPD PC/ Alq3/Mg/Ag devices with different proportions of the hole transporting to electron-transporting layer thicknesses as described previously in Fig. 70. The slopes in (cm/V)12 of the straight lines log(j/F3 4) vs. F1,/2 approximating the results according to Eq. (203) are given in the bottom-right corners of the figures. After Ref. 303. Copyright 2001 Institute of Physics (GB). Figure 78 Thermionic injection current-field characteristics for the ITO/75% TPD PC/ Alq3/Mg/Ag devices with different proportions of the hole transporting to electron-transporting layer thicknesses as described previously in Fig. 70. The slopes in (cm/V)12 of the straight lines log(j/F3 4) vs. F1,/2 approximating the results according to Eq. (203) are given in the bottom-right corners of the figures. After Ref. 303. Copyright 2001 Institute of Physics (GB).
FIGURE 10.13. Dependence of the emission intensity on injection current of one-, two-, and three-layer LEDs. A spin-cast PDHF film was used for the single-layer device and vapor-deposited films were used for the two- and three-layer devices. (From Ref. 31.)... [Pg.276]

In LEDs with thin top confinement layers, the current is injected into the active region mostly under the top electrode. Thus, light is generated under an opaque metal electrode, which results in a low extraction efficiency. The problem can be avoided with a current-spreading layer or window layer that spreads the current under the top electrode to regions not covered by the opaque top electrode. [Pg.16]

In NEA Si cold cathode devices, a planar diode is biased to inject electrons from an n-type substrate to a p-type NEA surface layer, where current is drawn off by an electric field. (Other cold cathodes of different design have been demonstrated in III-V structures [5.130-132].) This efficient emission could be useful in replacing hot (thermionic) cathodes in IR sensitive devices where a low luminence source with small electron energy spread is desirable, but requirements of zero contamination along with electron emission-density restrictions and long-term instability problems have so far prevented practical use. [Pg.181]

The pulse response of emission from a PAT, e.g., PODT, consists of two independent parts a fast and a slow transition part. The fast response corresponds to carrier transit between electrodes, and the anomalous slow response, which becomes significant at higher current, is explained by heating at the junction due to the injection current [717], The use of poly(thienylene vinylene) thin film as a buffer layer between ITO and poly(2,5-dialkyloxy-p-phenylene vinylene) results in increasing the breakdown voltage and increasing luminescence [718]. Further organic electroluminescence devices are described in literature [719,720]. [Pg.114]

In organic LEDs, the electroluminescence spectrum is quite similar to the photoluminescence spectrum of the polymer used in the device (Fig. 12), so that the light emission is attributed to the singlet exciton decay. The excitons are formed by electrons and holes injected into the polymer by the cathode and anode, respectively. The injection current density depends on several parameters such as the potential barriers for charge injection at the polymer-electrode interfaces, the mobility of the charge carriers in the polymer layer, the polymer layer thickness, and the applied voltage. The efficiency of these devices is intrinsically limited by the balance between injected electrons and holes and by the fraction of excitons that decay radiatively. Further efficiency limits are imposed by reflections that occur in the interfaces between the materials that compose the device, including the interface formed... [Pg.179]

With the aid of photon localization and enhancement by DUV-LSPR [59-61] LSPR, the output power of LEDs is expected to improve [62-65]. Huang et al. demonstrated for the first time that the enhanced emission of DUV-LEDs coupled to LSPRs generated by Al nanoparticles prepared on quantum wells (QWs) [66, 67]. Size- and density-controlled Al nanoparticles were fabricated by OAD (see Sect. 9.1) on the surface of Al cGai cN (x = 0.25), used as an active layer (see Fig. 9.6). Figure 9.7 shows the emitted electroluminescence (EL) spectra of samples with and without Al nanoparticles and the enhancement ratio that represents their relative intensities under a 15-mA injection current. Figure 9.7a, b shows the top emission (epitaxial layer side) and bottom emission(sapphire substrate side), respectively. A maximum tenfold top-emission enhancement and a maximum 2.8-fold bottom-emission enhancement were... [Pg.167]

The simple barrier model implies a strong dependence of the injection current on the position of the transport level in the organic layer. This has been verified with LED structures using ITO as the anode mataial in contact with poly-(phenyl phe-nylenevinylene) (PPPV), PPPV doped into polystyrene (PS), and trimethoxystilbene-... [Pg.282]


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