Laser line deflection

Evolution of Isothermal Polymerization Fronts via Laser Line Deflection and Predictive Modeling... 

Infrared laser lines involving. .. 2p 5s —. .. 2p 4p transitions in the 3.39 pm region are not particularly usefiil. However, they do cause some problems in a 632.8 nm laser because they deplete the populations of the. ., 2p 5s states and decrease the 632.8 nm intensity. The 3.39 pm transitions are suppressed by using multilayer cavity mirrors designed specifically for the 632.8 nm wavelength or by placing a prism in the cavity orientated so as to deflect the infrared radiation out of the cavity. 

Another method, based on an old idea about radiation pressure, uses the local separation of different isotopes in atomic or molecular beams. If the laser beam which crosses the molecular beam at right angles is tuned to an absorption line of a defined isotope in a molecular beam containing an isotopic mixture, the recoil from the absorption of the laser photons results in a small additional transverse velocity component. This leads to a beam deflection for the absorbing molecules which enables the desired isotope to be collected in a separate collector 154g)... 

Fig. 7. Setup for the degenerate four wave mixing experiments. The input beam is split in three beams. The beam splitter BS3 deflects a part of one of the pump beams to a power meter, which detects laser power fluctuations. The delay line with the retro reflector R adjusts the temporal overlap of the two pump beams coming from the front side on the sample. The long delay line with retro reflector R2 is moved to probe the temporal behavior of the nonlinearity in the sample. The phase conjugated signal beam propagates from the sample back to BSj and is then deflected through a stack of attenuation filters on a second power meter. An iris in front of the power meter increases the signal to noise ratio by removing scattered light...

Recently, the research laboratories of the microchip producer AMD began to use TERS for characterizing patterned silicon surfaces. Metallized AFM tips that have been prepared by sputter deposition of thin Ag films onto quartz tips and sharpened by focused ion beam (FIB) miUmg were used. With a top-illumination set-up, line profiles of patterned samples were recorded and the influence of laser deflection at the tip and laser heating on silicon stress measurements were studied [44-46]. 

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