Ionized magnetron sputtering

S.M. Rossnagel, J. Hopwood, Metal ion deposition from ionized magnetron sputtering discharge, J. Vac. Sci. Technol. B12 (1) (1994) 449. 

P.F. Cheng, S.M. Rossnagel, D.N. Ruzic, Directional deposition of cu into semiconductor trench structmes using ionized magnetron sputtering, J. Vac. Sci. 

Fig. 4.13. Work function and ionization potential of magnetron sputtered ZnO and ZnO Al films in dependence on oxygen content in the sputter gas for samples deposited at room temperature (left) and in dependence on substrate temperature for deposition in pure Ar (right). The values are derived from He I excited valence band spectra. All films were deposited using a total pressure of 0.5 Pa, a sputter power density of 0.74 Worn 2 and a substrate to target distance of 10 cm...

The combination of magnetron sputtering and inductively coupled plasma excitation (ICP) is a technique which allows enhanced ionization of the sputtered material. The combination of transition mode process control of the reactive sputtering and ICP plasma excitation is described in [112]. However, the resistivity of ZnO Al films sputtered from a Zn 1.5 wt% A1 target is in the of 1,000 gH cm at T = 150 °C, which is inferior to results from conventional sputter processes under similar conditions. 

The process data for the sputter deposition of cBN films by RF (13.56 MHz) diode sputtering with hBN and B4C targets as well as by d.c. magnetron sputtering with B4C targets have been reported in detail elsewhere [21,24,54]. In both configurations the ionization was enhanced by additional magnetic coils positioned around the substrate holder. The substrate electrodes were operated either with a d.c. potential, with pulsed d.c. [57] or with RF power. 

J. Bohlmark, J. Alami, C. Christov, A.P. Ehiasarian, U. Helmerssen, Ionization of sputtered metals in high power pulsed magnetron sputtering, J. Vac. Sci. Technol. 

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