Ion beam deposition films

Undoped BN films exhibit low electrical conductivities. Ronning et al. [81] determined for ion beam deposited films resistivities of 10 -10 Qcm and the I-U curves were best approximated assuming a Frenkel-Poole conduction mechanism. These resistivities are near to the expected bulk value (up to 10 flcm [82]). Furthermore the dielectric constant was estimated as e — 8-10. 

Ion beam deposition (film deposition) The deposition of a film using ions of the film material, usually obtained by the decomposition of a vapor precursor in a plasma source. Example Deposition of i-C from methane decomposed in a plasma source. 

As noted above, amorphous earbon films ean be produeed from earbon-eontaining gas phases (physieal vapour deposition, PVD). They ean also be produced from hydroearbon-eontaining gases (ehemical vapour deposition, CVD). Both PVD and CVD proeesses ean be thermally-aetivated or ean be plasma- and/or eleetrie field-assisted proeesses (e.g., mierowave assisted CVD and ion beam deposition). As a eonsequence a wide range of processes have been developed to form amorphous carbon films and a correspondingly complex nomenclature has evolved [70, 71]. 

Up to the present, a number of conventional film preparation methods like PVD, CVD, electro-chemical deposition, etc., have been reported to be used in synthesis of CNx films. Muhl et al. [57] reviewed the works performed worldwide, before the year 1998, on the methods and results of preparing carbon nitride hlms. They divided the preparation techniques into several sections including atmospheric-pressure chemical processes, ion-beam deposition, laser techniques, chemical vapor deposition, and reactive sputtering [57]. The methods used in succeeding research work basically did not... 

Aisenberg, S. and Chabot, R., Ion-beam Deposition of Thin Films of Diamond-like Carbon,"/. Appl. Phys.,Vo. 42,1971, pp. 2953-2958. 

In the following paragraphs, reports on XPS studies of a-C N H films are discussed. Most of the work that is discussed is not related to usual plasma deposition, but is related to ion-beam deposition, ion-beam assisted deposition, or other methods, because only a very few wide scope XPS studies on plasma-deposited a-C(N) H films were done up to this moment. Nevertheless, these results bring useful information on the role of hydrogen in the structure of a-C(N) H films. 

Ion Beam Deposition The most commonly used vacuum method for the rapid deposition of films (thin or thick) is sputtering (2M. This can be combined with ion beam techniques in a variety of ways (25) including (Figure 18) ion beam sputter deposition (IBSD) eg of oxide films or of hard carbon (26). In reactive systems the reactive gas is added to the argon ion beam. The properties of the deposited materials are modified substantially by varying the gas composition (Figure 19). 

We illustrate the molecular dynamics technique by application to the ion beam deposition technique. Molecular dynamics could be used to investigate the effect of deposition conditions on the microstructure of the growing film. The microstructural characteristics of interest include film roughness and porosity. 

Several transparent electrode materials were tried, including indium-tin oxide, or 5-nm-thick layers of Cr or Nb. Although the thin-metal films have an optical density of 0.2 - 0.3, they produce less debris on the surface during laser writing. The opposite electrode was typically a 20-30-nm-thick film of Cr or Nb deposited by evaporation or ion-beam deposition, respectively. For test purposes, this layer was patterned with a shadow mask in 3.5-mm-diameter circles that could be connected independently to the voltage source. 

A. Schenk, B. Winter, J. Biener, C. Lutterloh, U. Schubert, J. Kuppers Growth and thermal decomposition of ultrathin ion-beam deposited C H films. J. Appl. Phys. 77, 2462 (1995)... 

Various sputtering methods are used for the deposition of diamond like films (refer to Figure 14). It is possible to coat a substrate with a diamond like film by ion beam sputtering using the same ion sources that are used for (non-mass-analyzed) direct ion beam deposition. 

The fundamental processes involved in the nucleation of diamond like films during the ion beam deposition processes, the critical role of the impinging ion energy and the differences in the basic mechanisms of depositing carbon ions versus the use of argon ions (in the case of ion assisted deposition) are still not well understood. In the following sections some of the established concepts are reviewed and discussed. 

In direct ion beam deposition processes, ion energy in the range of a few tens of eV to a few tens of keV is used for diamond like film deposition. Careful control of ion energy in high-vacuum systems employing mass filtering of carbon ions (as in MSIB) has been shown to produce crystalline diamond materials up to several micrometers in size. ... 

Aisenberg, S. Chabot, R. Ion-beam deposition of thin films of diamond-like carbon. J. Appl. Phys. 1971, 42 (7), 2953-2958. 

S. Aisenberg, and R. Chabot, Ion-Beam deposition of thin films of diamondlike carbon, J. Appl. Pl s., 42 2953-2958 (1971)... 

J.M.E. Harper, Ion Beam Deposition, in Thin Film Processes, J. L. Vossen and... 

B. Min, S. Choi, Sn02 thin film gas sensor fabricated by ion beam deposition . Sensors and Actuators B Chemical, 98, 239-246, (2004). 

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