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Interface Behavior

Replacement of gas by the nonpolar, e.g., hydrocarbon phase (or oil phase) is used to modify the interactions between molecules in a spread film of investigated long-chain substances [6,15,17,18]. The nonpolar solvent-water interface possesses the advantage over that between gas and water, that the cohesion (i.e., interactions between adsorbed molecules due to dipole and van der Waals forces) is negligible. Thus, at the oil-water interfaces behavior of adsorbates is much closer to ideal, but quantitative interpretation may be uncertain, in particular for the higher chains which are predominantly dissolved in the oil phase to an unknown activity. Adsorption of dipolar substances at the w/a and w/o interfaces changes surface tension and modifies the surface potential of water [15] ... [Pg.33]

Figure 23.3 Interface behavior for the liquid-phase reaction... Figure 23.3 Interface behavior for the liquid-phase reaction...
In order to understand this behavior, we introduce a concept developed to explain the built-in potential for inorganic semiconductor/metal interfaces and which is based on the index of interface behavior S [121]. This parameter S is defined as the slope in a diagram, where the blockade potential of a semiconductor/metal interface is plotted against the work function of the metal ... [Pg.211]

Many experimental values for barrier heights at semiconductor-metal junctions have been obtained. Many researchers have also measured the barrier height as a function of the work function of the metal, and have mostly obtained a straight line, as expected from Eq. (2.3). However, in many cases the slope, d(/)b/dbarrier height to different metals increases with the ionicity of the semiconductor [17]. In order to obtain a better characterization of the experimental data, they defined an index of interface behavior, 5, which they introduced into Eq. (2.3) as... [Pg.27]

Fig. 2.5 Index of interface behavior, S, as a function of the electronegativity differences of semiconductors (After ref. [17])... Fig. 2.5 Index of interface behavior, S, as a function of the electronegativity differences of semiconductors (After ref. [17])...
In fermentation practice, clean bubble systems are probably rarely achieved and it is conservatively safe to base a design on contaminated rigid interface behavior. [Pg.339]

Fig. 6.16 An example of complex interface behavior Si anodic dissolution in dilute fluoride medium (1 M NH4CI + O.O25 M NH4F+O.O25 M HF. pH a 3). The reference spectrum was taken at open circuit (ca.-0.3 V) and the spectra were recorded on increasing the potential. Formation of the oxide film... Fig. 6.16 An example of complex interface behavior Si anodic dissolution in dilute fluoride medium (1 M NH4CI + O.O25 M NH4F+O.O25 M HF. pH a 3). The reference spectrum was taken at open circuit (ca.-0.3 V) and the spectra were recorded on increasing the potential. Formation of the oxide film...
At the present stage of the field, a multifaceted approach appears mandatory which focuses on fundamental research regarding charge and excitation energy transfer [16-18], materials development, particularly in conjunction with the developments in nanoscience [19-23], and control of interface behavior [24—26]. This latter aspect will be the focus of the present chapter. [Pg.61]

Failure The manifestation of a fault as it is executed. A failure is a deviation from the expected behavior, that is, some aspect of behavior that is different from that specified. This covers a large range of potential scenarios including, but by no means limited to, interface behavior, computational correctness, and timing performance, and may range from a simple erroneous calculation or output to a catastrophic outcome. [Pg.332]

In Sections 12.1 and 12.2 several important aspects of matrix and interface behavior, such as the effects of an inclusion on modulus and the effect of interfacial adhesion, were described. It is also appropriate to discuss specific molecular effects of rigid inclusions (particulate or fibrous) on a matrix, in order to demonstrate continuity between all types of reinforcements. Effects of environmental exposure on composite behavior are also briefly considered. [Pg.442]

Here, the capacitive and inductive elements, using fractional order p G (0, 1), enable formation of the fractional differential equation, that is, more flexible or general model of liquid-liquid interfaces behavior. Now, using again, for example, RL definition of fractional derivative and integral... [Pg.385]

Hansen, R.S. andToong, TV., Interface behavior as one fluid completely displaces another from a small-diameter tube, J. Colloid Interface Sci., 36, 410, 1971. [Pg.436]

Based upon the dependence of t F on R implied by the mobile and rigid interface limits of Equations (3) and (4), it follows that the 6.1 ME/W case exhibits more mobile interface behavior than do the 0.9 0/ME and 2.6 0/ME cases in Figure 7. This suggests faster drainage rates for the 6.1 ME/W system however, since the observed coalescence times are higher for this case than the 2.6 0/ME case, it follows that the associated critical collapse distance must be smaller. Evidently, the lower interfacial tension associated with the 2.6 0/ME system must make the film less stable and 6 much larger. [Pg.585]

Interface behavior. The concentration of a water-soluble surfactant at an interface (such as with air) is higher than its concentration in the bulk (aqueous) solution. This accumulation is responsible for a variety of surface phenomena such as wetting characteristics, lowered interfacial tension, and sometimes a change in surface charge. [Pg.222]

Figure 11.1 The interface behavior of gas-liquid reactions (a) regime 1, (b) regime 2, (c) regime 3, and (d) regime 4. (From Joshi, J.B. and Doraiswamy, L.K., Chemical Reaction Engineering in Chemicai Engineer s Handbook (Ed. L.F. Albright), CRC Press, Boca Raton, FL, 2009.)... Figure 11.1 The interface behavior of gas-liquid reactions (a) regime 1, (b) regime 2, (c) regime 3, and (d) regime 4. (From Joshi, J.B. and Doraiswamy, L.K., Chemical Reaction Engineering in Chemicai Engineer s Handbook (Ed. L.F. Albright), CRC Press, Boca Raton, FL, 2009.)...

See other pages where Interface Behavior is mentioned: [Pg.240]    [Pg.521]    [Pg.5]    [Pg.212]    [Pg.165]    [Pg.209]    [Pg.351]    [Pg.28]    [Pg.80]    [Pg.498]    [Pg.162]    [Pg.201]    [Pg.131]    [Pg.442]    [Pg.443]    [Pg.445]    [Pg.447]    [Pg.449]    [Pg.451]    [Pg.453]    [Pg.145]    [Pg.891]    [Pg.1916]    [Pg.86]    [Pg.29]   


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