Induced field effects

The model was again applied to some of the cases discussed in the previous section, this time with the dimensionless current density T varying from -750 to 500. As noted earlier, the present work is concerned with liquid-liquid-liquid systems, which do not require the electrodes to be in the immediate vicinity of the membrane. Thus, the boundary conditions need not be rewritten. If the cmrent term is not set equal to zero, both applied and induced field effects are incorporated. 

The influence of a induced field on a metallic (magnetic) structure is in the form of closed magnetic loops, which cause hysteresis and eddy current losses. These closed loops cannot be broken by insulating magnetic structures at bends or joints or any other locations. (Refer to Figure 28.32 for more clarity.) There is thus no treatment that can be applied to such structures or bodies in the vicinity of an IPB to protect them from the magnetic effects of the field if present in the space. 

Theoretical analyses (75-77) of the matrix-induced changes in the optical spectra of isolated, noble-metal atoms have also been made. The spectra were studied in Ar, Kr, and Xe, and showed a pronounced, reversible-energy shift of the peaks with temperature. The authors discussed the matrix influence in terms of level shift-differences, as well as spin-orbit coupling and crystal-field effects. They concluded that an increase in the matrix temperature enhances the electronic perturbation of the entrapped atom, in contrast to earlier prejudices that the temperature dilation of the surrounding cage moves the properties of the atomic guest towards those of the free atom. 

In conclusion to this part it seems noteworthy that in contrast to the effect of adsorption of molecular particles on electrophysical properties of oxide semiconductors, the major peculiarity of this effect for such chemically active particles as the simplest free radicals or atoms of simple gases (H2, O2, N2, CI2, etc.) is that they are considerably more chemically active concerning the impurity centres [47]. The latter are responsible for dope conductivity of oxide semiconductors. As for the influence of electric fields on their adsorption due to adsorption-induced surface charge distribution, they are of minor importance which is proved by results of the experiments on assessing field effect on adsorp-... 

ISFET Ion-selective field effect transistor LIBS Laser-induced breakdown... 

It was discovered by Al shits et al. (1987) that static magnetic fields of order 0.5T affect the motion of dislocations in NaCl crystals. This is not an intrinsic effect but is associated with impurities and/or radiation induced localized defects. Also, magnetic field effects have been observed in semiconductor crystals such as Si (Ossipyan et al., 2004). 

Mechanistic details of the microwave-induced oligomerization of methane on a microporous Mn02 catalyst were studied by Suib et al. [67], with emphasis on fundamental aspects such as reactor configuration, additives (chain propagators, dielectrics), temperature measurements, magnetic field effect, and reaction conditions. 

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