Indium electrical resistivity

Contact with steel, though less harmful, may accelerate attack on aluminium, but in some natural waters and other special cases aluminium can be protected at the expense of ferrous materials. Stainless steels may increase attack on aluminium, notably in sea-water or marine atmospheres, but the high electrical resistance of the two surface oxide films minimises bimetallic effects in less aggressive environments. Titanium appears to behave in a similar manner to steel. Aluminium-zinc alloys are used as sacrificial anodes for steel structures, usually with trace additions of tin, indium or mercury to enhance dissolution characteristics and render the operating potential more electronegative. 

The electrical resistivity data on crystals of indium(III) oxyfluoride indicate a nearly temperature independent conductor (3.6 X 10 2 fl-cm. at room temperature and 1.8 X 10-2 fl-cm. at liquid-helium temperature) with high negative thermoelectric power (—230 juV./°C.). These properties are similar to those observed for some conductive forms of indium(III) oxide. 

Tangential force coefficients can be determined by direct measurement of the tangential tractive force and the normal loading force of the system, but the ratio A /A is usually obtained by indirect methods. McFarlane and Tabor [9] found that the adhesion of indium to steel under the influence of a normal preload was so strong that the tractive force to initiate sliding after removal of the preload was essentially a measure of the shear force in indium. From this measurement they calculated a value of a =3.3 for indium. Courtney-Pratt and Eisner [10] evaluated A /A by electrical resistance and obtained a value of a = 11.66 for platinum. 

Photoconductive materials such as lead sulfide, lead selenide or indium antimonide, which respond to incident infrared radiation by changing their electrical resistance, are used as the sensing elements in instrumentation for radiometric measurement of temperature. Bowden and Thomas [27] measured the temperature of "hot spots" in the sliding of a metal rider against a glass disk with a lead sulfide cell in the arrangement illustrated in Fig. 15-11. A glass disk was used because the... 

The solid solution LaAg Ini- crystallizes with a CsCl type stmcture (Balster et al., 1975). This pseudobinary system undergoes a martensitic (displacive) crystal structure transition. At low temperature the X-ray powder patterns of polycrystalline samples show line splitting corresponding to a cubic-to-tetragonal transformation. The indium concentration 1 - x and thus the electron count per formula unit has a large influence on the transition temperature. This structural phase transition is revealed also in the temperature dependence of the electrical resistivity. For indium concentrations above 5% the curves show a pronounced hysteresis behavior. 

D. R. Cairns, R. P. Witte II, D. K. Sparacin, S. M. Sachsmann, D. C. Paine, and G. P. Crawford, Strain dependent Electrical Resistance of Tin doped Indium Oxide on Polymer Substrates, Appl. Phys. Lett. 76 (2000) 1425 1427... 

Facchetti, A., et al.. Design and preparation of zwitterionic organic thin films self-assembled sUoxane-based, thiophene-spaced A-benzylpyridinium dicyanomethanides as nonlinear optical materials. Langmuir, 2001. 17(19) p. 5939-5942. HiUebrandt, H., et al.. High electric resistance polymer/lipid composite films on indium-tin-oxide electrodes. Langmuir, 1999. 15(24) p. 8451-8459. 

Solders. In spite of the wide use and development of solders for millennia, as of the mid-1990s most principal solders are lead- or tin-based alloys to which a small amount of silver, zinc, antimony, bismuth, and indium or a combination thereof are added. The principal criterion for choosing a certain solder is its melting characteristics, ie, soHdus and Hquidus temperatures and the temperature spread or pasty range between them. Other criteria are mechanical properties such as strength and creep resistance, physical properties such as electrical and thermal conductivity, and corrosion resistance. 

The combination of low optical absorbance and high electrical conductivity has attracted a lot of interest for transparent conductor applications. When coupled with its flexibility, it is widely seen as a possible replacement for indium-doped tin oxide (ITO), which has a sheet resistance of 100 Q/cm at 90 % transparency. By growing graphene on copper foils, sheet resistances of 125 Q/cm at 97.4% transparency have been achieved [19]. This has been improved by combining four layers with doping of the graphene, giving resistance of 30 Q/cm at 90% transparency, all done on 30-inch roll-to-roll production scale. 

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