Implantation of electrons

Figure 1. Implantation of electrons in polytetrafluoroethylene films to form electric transducer of high stability and sensitivity.

The metal oxide-semiconductor field effect transistor (MOSFET) is the most important component in modem electronics, at least from the perspective of sheer numbers. A typical computer chip contains vast numbers of MOS-FETs. The basic architecture is illustrated in Eigure 1. The semiconductor is connected to a substrate on one side and to a gate contact on the other, which is separated from the semiconductor by a dielectric film. The region of semiconductor directly beneath the gate connects two contacts, the source and the drain. If the semiconductor is p-type Si, then source and drain contacts may be formed by implantation of electron-rich elements to yield shallow regions composed of n-type material. As the potential difference between the gate and the substrate is increased, the channel between the... 

Shallow donors (or acceptors) add new electrons to tire CB (or new holes to tire VB), resulting in a net increase in tire number of a particular type of charge carrier. The implantation of shallow donors or acceptors is perfonned for tliis purjDose. But tliis process can also occur unintentionally. For example, tire precipitation around 450°C of interstitial oxygen in Si generates a series of shallow double donors called tliennal donors. As-grown GaN crystal are always heavily n type, because of some intrinsic shallow-level defect. The presence and type of new charge carriers can be detected by Flail effect measurements. 

Charging can be a significant problem when the sample is an insulator. Bombarding the sample with positive ions can lead to implantation of positive ions as well as the emission of electrons. One way that this problem can be overcome is by flooding the sample surface with a beam of low-energy electrons [50]. 

Conventional electronic devices are made on silicon wafers. The fabrication of a silicon MISFET starts with the diffusion (or implantation) of the source and drain, followed by the growing of the insulating layer, usually thermally grown silicon oxide, and ends with the deposition of the metal electrodes. In TFTs, the semiconductor is not a bulk material, but a thin film, so that the device presents an inverted architecture. It is built on an appropriate substrate and the deposition of the semiconductor constitutes the last step of the process. TFT structures can be divided into two families (Fig. 14-12). In coplanar devices, all layers are on the same side of the semiconductor. Conversely, in staggered structures gate and source-drain stand on opposing sides of the semiconductor layer. 

New natural polymers based on synthesis from renewable resources, improved recyclability based on retrosynthesis to reusable precursors, and molecular suicide switches to initiate biodegradation on demand are the exciting areas in polymer science. In the area of biomolecular materials, new materials for implants with improved durability and biocompatibility, light-harvesting materials based on biomimicry of photosynthetic systems, and biosensors for analysis and artificial enzymes for bioremediation will present the breakthrough opportunities. Finally, in the field of electronics and photonics, the new challenges are molecular switches, transistors, and other electronic components molecular photoad-dressable memory devices and ferroelectrics and ferromagnets based on nonmetals. 

It is known that hydrogen incorporated into Si subsequently exposed to ionizing radiation inhibits the formation of induced secondary point defect (Pearton and Tavendale, 1982a). For example, in both Si and Ge a number of electron or y irradiation induced defect states appear to be vacancy-related, and exposure of the Si or Ge to a hydrogen plasma (or implantation of hydrogen into the sample) prior to irradiation induces a degree of... 

At low temperatures, donors and acceptors remain neutral when they trap an electron hole pair, forming a bound exciton. Bound exciton recombination emits a characteristic luminescence peak, the energy of which is so specific that it can be used to identify the impurities present. Thewalt et al. (1985) measured the luminescence spectrum of Si samples doped by implantation with B, P, In, and T1 before and after hydrogenation. Ion implantation places the acceptors in a well-controlled thin layer that can be rapidly permeated by atomic hydrogen. In contrast, to observe acceptor neutralization by luminescence in bulk-doped Si would require long Hj treatment, since photoluminescence probes deeply below the surface due to the long diffusion length of electrons, holes, and free excitons. 

Fig. 12. Transmittance of a Si multiple internal reflection plate before and after H-implantation at room temperature. [From Stein (1975). Reprinted with permission from Journal of Electronic Materials, Vol. 4, p. 159 (1975), a publication of The Metallurgical Society, Warrendale, Pennsylvania.]...

The protection of microelectronics from the effects of humidity and corrosive environments presents especially demanding requirements on protective coatings and encapsulants. Silicone polymers, epoxies, and imide resins are among the materials that have been used for the encapsulation of microelectronics. The physiological environment to which implanted medical electronic devices are exposed poses an especially challenging protection problem. In this volume, Troyk et al. outline the demands placed on such systems in medical applications, and discuss the properties of a variety of silicone-based encapsulants. 

Humidity Testing of Silicone Polymers for Corrosion Control of Implanted Medical Electronic Prostheses... 

Coloma F, Marquez F, Rochester CH, Anderson JA (2000) Determination of the nature and reactivity of copper sites in Cu-Ti02 catalysts. Phys Chem Chem Phys 2 5320-5327 Umebayashi T, Yamaki T, Itoh H, Asai K (2002) Analysis of electronic structures of 3d transition metal-doped Ti02 based on band calculations. J Phys Chem Solids 63 1909-1920 Yamashita H, Ichihashi Y, Takeuchi M, Kishiguchi S, Anpo M (1999) Characterization of metal ion-implanted titanium... 

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