Hydrogen plasma sputtering

Fig. 24.8 Fracture cross-sectional SEM morphologies of a pure Ti and b hydrogen plasma-sputtered Ti showed the hydrogen-induced transformation from ductile to fragile modes of failure (reprinted with permission from [92])...

The analysis was done on a fresh layer after sputtering off the very thin air-contaminated layer. All samples were pretreated with oxygen and hydrogen plasma. 

Karapatnitski, LA., Mit, K.A., Mukhamedshina, D.M., Baikov, G.G. (2000). Effect of hydrogen plasma processing on the structure and properties of tin oxide thin film produced by magnetron sputtering. Proc. of the 4th Int. Conf. on Thin Film Physics and Applications, 8-11 May, 2000. Shanghai, China. Vol. 4086, p. 323. 

The deposition of amoriDhous hydrogenated silicon (a-Si H) from a silane plasma doped witli diborane (B2 Hg) or phosphine (PH ) to produce p-type or n-type silicon is important in tlie semiconductor industry. The plasma process produces films witli a much lower defect density in comparison witli deposition by sputtering or evaporation. 

For intermediate temperatures from 400-1000°C (Fig. 11), the volatilization of carbon atoms by energetic plasma ions becomes important. As seen in the upper curve of Fig. 11, helium does not have a chemical erosion component of its sputter yield. In currently operating machines the two major contributors to chemical erosion are the ions of hydrogen and oxygen. The typical chemical species which evolve from the surface, as measured by residual gas analysis [37] and optical emission [38], are hydrocarbons, carbon monoxide, and carbon dioxide. 

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