Heavy ion irradiation

Ion beams are useful to simulate the environment in space, where semiconductor devices are exposed to high-energy heavy-ion impact. Incorrect operation of semiconductor devices such as single-event upset results from the heavy-ion irradiation. The cocktail ion families of MjQ = 4 and 5, available at the JAERI AVF cyclotron facility [24], are frequently utilized to investigate the tolerance of the semiconductor devices to the radiation, and to survey highly radiation-tolerant semiconductor devices appearing in the market. Efficiency of the radiation-tolerance testing for thousands of kinds of semiconductor devices has been totally improved by the cocktail acceleration technique. 

Lian, J., Wang, L. M., Chen, J., Ewing, R. C. Kutty, K. V. G. 2002b. Heavy ion irradiation of zirconate pyrochlores. Materials Research Society Symposium Proceedings, 713, 507-512. 

Begg, B. D., Hess, N. J., Weber, W. J., Devanathan, R., Icenhower, J. P Thevuthasan, S. McGrail, B. P. 2001. Heavy-ion irradiation effects on structures and acid dissolution of pyrochlores. Journal of Nuclear Materials, 288, 208-216. 

Kratschmer, W., and D. R. Huffman, 1979. Infrared extinction of heavy ion irradiated and amorphous olivine, with applications to interstellar dust, Astrophys. Space Sci., 61, 195-203. 

The heavy ion irradiation of the DLC films was performed2 using Uranium projectiles of 1 GeV with a dose of 1010 ions/cm2, i.e. 100 ions per pm2. The properties of these channels were studied by means of SFM using a conducting tip both diamond and tungsten carbide coated tips3 were used successfully. 

Melot M, Ngono-Ravache Y, Balanzat E. (2003) Role of the irradiation temperature on the modifications of swiff-heavy-ion irradiated polyethylene. Nucl Instr and Meth in Phys Res B 209 205-211. 

The radiolytic yield, named G-value, is essential to predict the long term chemistry. For example, a deterministic program which solves a set of differential equations uses it to quickly obtain the amount of molecular hydrogen produced during the exploitation of a water cooling system. The yield determination needs the measurement of the concentration of the concerned chemical species produced or consumed during irradiation and also the dose delivered to the solution. Both of them are difficult to obtain in the case of heavy ion irradiation. 

The hydrated electron is commonly detected by pulse radiolysis with electron beams. In the case of highly-structured track, this very reducing species reacts easily with oxidant like OH radical in its vicinity at earliest time after the ionization track is formed. That is the reason why it is a real challenge to detect this species yet with heavy ion irradiation. Giving a G-value remains delicate because the concentrations are lower than 10 M and dose must be measured with a high accuracy. As it is shown in Fig. 5, the time dependence of hydrated electron is typical of a track structure in space and time in the first 100 ns the concentration of initial hydrated electron is at least divided... 

But the comparison is still not easy because there are not enough comparable results that are obtained with the same method (pulse radiolysis) and similar conditions (track segment). Most of the other studies on hydrated electron under heavy ion irradiation were performed by the scavenging method by using the glycylglycin species or... 

Baldacchino G, Bouffard S, Balanzat E, Gardes-Albert M, Abedinzadeh Z, Jore D, Deycard S, Hickel B. (1998) Direct time resolved measurement of radical species formed in water by heavy ions irradiation. Nucl Instrum and Meth in Phys Res B146 528-532. 

Taguchi M, Kojima T. (2005) Yield of OH radicals in water imder high-density energy deposition by heavy-ion irradiation. Radiat Res 163(4) 455-461. 

The requirement for use of these membranes as templates is to have high track etch ratios. For PC, track etch ratios above ten thousand have been observed. At the other extreme, addition of solvents, such as methanol, ethanol or propanol can dramatically decrease the track etch ratio, down to 2 to 4 in the case of PET. Although they accelerate the etching process, polymers like PMMA are generally etched with an acidic medium leading to very low etch track ratios 1-10. In a recent study on the polymer polyallyl diglycol carbonate (PADC) [9] it was found that etch-rate values of the PADC increase nearly fourfold if the polymer is irradiated with 100 Mrad dose of electrons at 2 MeV prior to the heavy ion irradiation. The etch tracks were created by 140 MeV Si ions. 

The fa vs. D curves generated from the various models have been compared with the limited amount of experimental data to infer which type of model, e.g. direct impact vs. double overlap, is most applicable. As shown in Figure 7, the measured dependence of fa on D for Cm-doped Ca2Nd8(Si04)602 is consistent with the predicted curve for the direct impact model for ion-irradiated zircon, the measured dependence offa on D is consistent with the double-overlap model SrTiOs, the defect accumulation model (Weber 2000). It has been generally accepted that for heavy ion irradiations, especially at low temperatures, the amorphization process in ceramic materials is the result of amorphization within the cascade. For lighter ions (or electrons and neutrons) or at high temperatures, the dominant mechanism is considered to be cascade-overlap or defect accumulation. 

Meldram A, Zinkle SJ, Boatner LA, Ewing RC (1999b) Heavy-ion irradiation effects in the ABO4 orthosilicates decomposition, amorphization, and recrystallization. Phys Rev B59 3981-3992 Meldram A, Boatner LA, Ewing RC (2000a) A comparison of radiation effects in ciystalline AB04-type phosphates and silicates. Mineral Mag 64 183-192... 

Wang SX, Wang LM, Ewing RC (2000d) Nano-seale glass formation in pyrochlore by heavy ion irradiation. J Non-Cryst Solids (in press)... 

The Raman spectrum of the product of plasma spraying of nanodiamonds shows the formation of well-defined carbon onions (band at 1571 cm-1) and defective carbon onions (1592 cm-1).288 Raman spectroscopy was used to follow the effects of heavy-ion irradiation on nanocomposite carbon films.289 Laser-grown carbon microfibres were characterised by Raman microfibres,290 as were giant fullerene-like hollow spheres generated from C60 by compression at 57 GPa.291... 

On the practical side, such an approach may help resolve the low-dose threshold issue that has been debated for many years in the radiobiology community. However, such capabilities will reach beyond the obvious applications to the nano-size regime. Because of the very short penetration depth of high-LET radiation, the availability of microscopic detection techniques should allow time-domain studies with heavy-ion irradiation. 

Agrawal, S. Srivastava, S. Kumar, S. Sharma, S.S. Tripathi, B. Singh, M. Vijay, Y.K. 2009. Swift heavy ion irradiation effect on Cu-doped CdS nanocrystals embedded in PMMA. Bulletin of Material Science,... 

Chawla, S. Ghosh, A.K. Avasthi, D.K. Knlriya, P.K. Ahmad, S. 2009. Functional polymers synthesized by grafting of glycidyl methacrylate onto swift heavy ions irradiated BOPP films using chemical initiator. Nuclear Instruments and Methods in Physics Research Section B, 267(14) 2416—2422. 

Kumar, V. Kumar, R. Lochab, S.P. Singh, N. 2007. Effect of swift heavy ion irradiation on nanocrystalline CaS Bi phosphors Structural, optical and luminescence studies. Nuclear Instruments and Methods in Physics Research, Section B, 262(2) 194—200. 

Kumar R, Singh F, Angadi B, Choi W K, Jeong K, Song J H, Khan M W, Srivastava J P, Kumar A, Tondon R P, Single phase formation of Co-implanted ZnO thin films by Swift heavy ion irradiation Optical studies, J. Appl. Phys., 100, 113708-5, 2006. 

Toulemonde M, Dufour Ch, Meftah A, Paumier E, Transient thermal processes in heavy ion irradiation of crystalline inorganic insulators, Nucl. Instrum. Methods Phys. Res. B, 166-167, 903-912, 2000. 

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