Hall mobility, measurement table

The following tables list the carrier concentrations, Hall mobility, conditions of the growth technique and polytype. In some cases, C-V and other measurement techniques have been employed. 

Hall-Effect Measurements. Bullemer and Riehl (16) made these measurements. The experimental difficulties are great because of high electrode resistance, polarization effects, surface conductivity, and a low signal-to-noise ratio. Special palladium-black electrodes were used. The majority carriers were found to have a positive sign, as they should if they are protons. At —2°C. and —8°C., respectively, their concentration was 1.0 and 0.4 X 10 cm."", and the Hall mobility was 0.8 and 1.4 cm. /volt-sec. These values are 10 to 20 times lower and higher, respectively, than the results found by Eigen and De Maeyer from the saturation current and dissociation field effect (Table IV). 

Effect of Li+ implantation and postannealing on Mgln204 films have been further characterized by measuring the carrier concentration and Hall mobility at room temperature by the Van der Pauw method. Obtained results are listed in Table 9.1. 

The Hall effect of boron carbide is small (Fig. 35a and b). It depends on composition and temperature (14,147-149). Because the calculation of the Hall mobility from the measured Hall constant depends strongly on the electronic transport mechanism, which for boron carbide has not yet been finally solved, the mobilities calculated after classical theories and shown in Fig. 35 are somewhat questionable. Hall effect and magnetoresistance were measured up to 15 T (Figs. 36 and 37) (157). The behavior expected from classical theory was confirmed in a large range, and for B > 13 T the magnetoresistance seems to indicate beginning Shubnikov-de Haas oscillations. The transport parameters obtained are listed in Table 3. 

Some silicides are superconductors with transition temperatures in a broad range of values [148, 149] and small electron-phonon coupling constants [144], Table 14.3 collects carrier concentrations for thin silidde films evaluated from Hall effect measurements. Most metallic silicides present both electrons and holes in approximately equal number and having the same characteristics, that is, mobility and carrier density. This behavior is traced back to the existence of two bands, one electron-Uke and one hole-hke, crossing the Fermi energy [150]. 

Fig. 11.12. The results of Hall measurements of mobility are shown in Table 11.3. The Mott-Schottky plot showed a flatband potential of -0.23 V on the NHS. Some electrode kinetic measurements (Miller, 1992) are shown in Fig. 11.13.

The influence of the structure of the alloys on their physical properties was determined by measuring the room-temperature values of the electrical conductivity (Hall coefficient, the thermoelectric power (a), and the total thermal conductivity (>t). The carrier density (p), the carrier mobility (/i), and the thermoelectric figure of merit (z) were calculated. The samples used in these measurements were cut from the middle parts of the ingots and their compositions were checked by x-ray diffraction analysis. The results of the measurements are presented in Table 1. 

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