HAHN-MEITNER-INSTITUT

Dr. H. Wollenberger Hahn-Meitner Institut Glienicker Str. 100 D-1000 Berlin 39 Germany... 

Department of Solare Energetik, Hahn-Meitner Institute, Berlin, Germany... 

Hahn-Meitner-Institut fur Kernforschung Berlin, Sektor Strahlenchemie, Berlin, West Germany... 

Hahn-Meitner-Institut Berlin Bereich Strahlenchemie, D-1000 Berlin 39, FRG... 

Hansen, H., (1980) Reconstruction of the electron momentum distribution from a set of experimental Compton profiles, Hahn Meitner Institute (Berlin), Report HMI B 342. 

M. Meissner, S. Abens, P. Strelow Hahn-Meitner Institute Report, Berlin (2000) www.hmi.de/bensh/ sample-env/home.html... 

Pulse Train, Photo Diode, Absorption and Emission, Hahn Meitner Institute (1972) jingle Pulse.Cherenkov Light, Absorption, Argonne N. L. (1975) ... 

Pulse Train, Conductivity, Hahn Meitner Institute (1979) ... 

Quantum size effects in semiconductor nanocrystals became an important field of research in the 1980s, when a number of groups, notably those of Brus at Bell Labs and Henglein at the Hahn Meitner Institute, published seminal papers on the effects of the size of semiconductor colloids on their optical properties and correlated crystal size with changes in electronic band structure. 

Lawrence Livermore National Laboratory and at the Hahn-Meitner-Institut at... 

AIXTRON already joined a German government-funded project, headed by the Hahn-Meitner Institute to explore industrial production of organic solar cells by OVPD. 

I would like to thank my students and coworkers. The author specially acknowledges Dr. P. Bogdanoff (Hahn-Meitner-Institut-Berlin) for his help in DEMS measurements. 

Aionso-Vante, Nicolas was bom in Oaxaca, Mexico and educated in Mexico-city. He received his Dr. Xs Sc. (1984) from the Louis Pasteur University of Strasbourg, France. He then joined the research group of Prof. H. Tributsch at the Hahn-Meitner-Institut in Berlin, Germany, as an Alexander von Humboldt fellow. Thereafter, he continued as a senior scientist. He is presently Professor of Chemistry at the Chemistry faculty of the University of Poitiers, France. His research interest has concentrated, these late years, on material science research for (photo)electrocata-lysis, and the in situ investigation of interfacial processes combining spectroscopy with electrochemical techniques. 

M. Grundmann, H. von Wenckstern, Proc. FVS-Workshop TCOs fiir Diinnschichtsolarzellen und andere Anwendungen, Freyburg, Germany, 10-12. April 2005, Hahn-Meitner-Institut Berlin... 

Hahn-Meitner-Institut Berlin GmbH, Abteilung Solare Energetik (SE5) Glienicker Str. 100,14109 Berlin, Germany E-mail ellmer hmi.de... 

Hahn-Meitner-Institut Berlin, Bereich Strahlenchemie 1000 Berlin 39, Federal Republic of Germany... 

Hahn-Meitner-Institut Berlin, Berlin, Germany Vladimir Nikitenko... 

The authors wish to thank the National Science Foundation, the Army Research Office, the Petroleum Research Foundation of the American Chemical Society, and the Hahn-Meitner Institut, Berlin for support of this work. 

AT T, 401,511 Hahn-Meitner Institut, 16 Hewlett-Packard Laboratories, 86,224,279 Hitachi Chemical Company, Ltd., 547 Hitachi Device Development Center, 188 Hitachi, Ltd., 77,188,211 Honeywell, Inc., 261,466 Los Alamos National Laboratory, 559 Massachusetts Institute of Technology, 428... 

The first pulse radiolysis system capable of picosecond time resolution (20 ps) was in use by 1968 at the University of Toronto [145] and others were subsequently installed at Notre Dame University, Argonne National Laboratory, Tokyo, Osaka, and Hokkaido Universities, the Hahn-Meitner Institute in Berlin, and the Institute of Chemical Kinetics and Combustion in Novosibirsk. Current developments at Brookhaven [104] and Argonne [146] National Laboratories and Tokyo University [147] are aimed at subpicosecond timescales a new picosecond facility is also being installed at Orsay [148]. 

Beam Exposure and Research Facility) chamber of the ISL heavy ion accelerator of the Hahn-Meitner-Institute, Berlin, Germany, at a flux of typically 0.1 nA up to fluences of 5><10 cm. The resulting latent SHI tracks produced in the oxide layer were etched by 1.35 wt.% HF solution at 20 1 C for 40 min, until the track opening was detected. The geometry of etched tracks (nanopores) is a truncated cone with the base diameter of 150-200 nm at the Si/SiOa interface and 250-300 nm on the top. The final depth of pores (200 nm) was less than the initial thickness of Si02 layer due to etching process of Si02 film. 

The author wishes to thank Professor K. Hayashi of Osaka University for continuous encouragement. He is deeply indebted to Professor W. Schnabel of the Hahn-Meitner Institute for his stimulating contributions to the laser experiments of Sect. 2.2. He is also grateful to Emeritus Professor H. Fujita of Osaka University for critically inspecting the manuscript and giving invaluable comments. He also thanks all of his co-workers for their devoted contributions. 

The author would like to thank his students and co-workers. A special acknowledgement is due to Dr. K. Ellmer (Hahn-Meitner-Institut-Berlin) for his help in RBS measurements. Dr. E. Savinova, and Prof. D. Kochubey (Boreskov Institut of Catalysis, Novosibirsk) for the collaboration in the EXAFS measurements via an INTAS program Dr. W. Vogel (Fritz-Haber-Institute) for the DRX measurements on ruthenium nanoparticles, and Prof. J.-M. Coustard (Poitiers University) for NMR measurements. Special thanks are also due to the staff of the Hasylab-Hamburg Synchrotron for the beam allocated to perform in-situ measurements. 

Hahn-Meitner-Institut Berlin GmbH Bereich Physikalische Chemie Glienicker StraBe 100 D-14109 Berlin Germany... 

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