Growth rate dissolution

Supersaturation Molecular mobility Nucleation temperature Nucleation rate Growth rate Dissolution rate Meta-stable zone width Evaporation rate Heating/cooling rate Anti-solvent addition rate... 

It would seem easy in principle to separate cracking that proceeds by anodic dissolution from hydrogen-assisted cracking by investigating the effects of polarisation on the crack growth rate, time to failure or some... 

The properties of SEI electrodes, the growth rate of the SEI, the mechanism of dissolution and deposition, and the effects of various factors on SEI conductivity have been addressed elsewhere [1, 2] space limitations do not permit their repetition here. 

A different melting point, and hence supercooling, is predicted for the strained sector. This is the basis for a different interpretation of the (200) growth rates a regime //// transition occurs on (110) but not on (200). This is despite the fact that the raw data [113] show a similar change in slope when plotted with respect to the equilibrium dissolution temperature (Fig. 3.15). It is questionable whether it is correct to extrapolate the melting point depression equation for finite crystals which is due to lattice strain caused by folds, to infinite crystal size while keeping the strain factor constant. 

As Fig. 6.13 illustrates growth and dissolution are not symmetric with respect to the saturation state. At very high undersaturation, the rate of dissolution becomes independent of S and converges to the value of the apparent rate constant. This is why studies of dissolution far from equilibrium allow to study the influence of inhibition/ catalysis on the apparent rate constant, independently from the effect of S. The same is not true for crystal growth. 

In carbonate diagenesis V we deal usually with a combination of low supersaturation and absence of mechanical agitation. Homogeneous nucleation will certainly not occur. The important factors to be investigated are heterogeneous nucleation and rates of growth and dissolution of crystals. 

The geochemical fate of most reactive substances (trace metals, pollutants) is controlled by the reaction of solutes with solid surfaces. Simple chemical models for the residence time of reactive elements in oceans, lakes, sediment, and soil systems are based on the partitioning of chemical species between the aqueous solution and the particle surface. The rates of processes involved in precipitation (heterogeneous nucleation, crystal growth) and dissolution of mineral phases, of importance in the weathering of rocks, in the formation of soils, and sediment diagenesis, are critically dependent on surface species and their structural identity. 

The smallest pores that can be formed electrochemically in silicon have radii of < 1 nm and are therefore truly microporous. However, confinement effects proposed to be responsible for micropore formation extend well into the lower mesoporous regime and in addition are largely determined by skeleton size, not by pore size. Therefore the IUPAC convention of pore size will not be applied strictly and all PS properties that are dominated by quantum size effects, for example the optical properties, will be discussed in Chapter 7, independently of actual pore size. Furthermore, it is useful in some cases to compare the properties of different pore size regimes. Meso PS, for example, has roughly the same internal surface area as micro PS but shows only negligible confinement effects. It is therefore perfectly standard to decide whether observations at micro PS samples are surface-related or QC-related. As a result, a few properties of microporous silicon will be discussed in the section about mesoporous materials, and vice versa. Properties of PS common to all size regimes, e.g. growth rate, porosity or dissolution valence, will be discussed in this chapter. 

The steady-state condition (/ap=Jps) at the pore tip determines not only the pore diameter but also the pore growth rate. The rate rp of macropore growth can be calculated if the local current density at the pore tip is divided by the dissolution valence nv (number of charge carriers per dissolved silicon atom), the elementary charge e (1.602 xlO-19 C) and the atomic density of silicon Nsi (5xl022 cm-3) ... 

A computer model has been generated which predicts the behaviour of a continuous well mixed gypsum crystallizer fed with a slurry of hemihydrate crystals. In the crystallizer, the hemihydrate dissolves as the gypsum grows. The solution operating calcium concentration must lie in the solubility gap. Growth and dissolution rates are therefore limited. 

Measurements were undertaken of the solubility of each phase in acid solutions, of the growth rate of gypsum crystals and the dissolution rate of hemihydrate. The growth rate depends on the square of the supersaturation and on temperature with an activation energy of 64 kJ/mol. The nucleation rate appears to vary linearly with supersaturation. 

As far as the gypsum crystals are concerned, the analysis is identical to that for a seeded MSMPR (34). The information required is the growth rate and the mean residence time. For the hemihydrate, the analysis is that for a continuous seeded MSMPR dissolver (35), which parallels that for the crystallizer. The information needed is the dissolution rate and the mean residence time. 

The growth and dissolution rates depend on the driving forces within the solubility gap and are Interrelated by the material balance of relation 1 (In suitable form). 

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