Growth configuration

L. Davoust, R. Moreau, M. D. Cowley, P. A. Tanguy, F. Bertrand. Numerical and analytical modelling of the MHD buoyancy-driven flow in a Bridgman crystal growth configuration. J Cryst Growth 750 422, 1997. 

Fig. 4.4. Typical growth configurations from the simulations with kT°Jt- = 0.7 (left), and kT°Je = 0.55 (right), (from [162] by permission of the publishers, Butterworth-Heinemann Ltd. )...

Typical growth configurations from the simulations are shown in Fig. 4.4, for kT°/s = 0.7 and kT Je = 0.55, respectively (e is the interaction energy between adjacent units, and T° is the equilibrium melting temperature). Notice the increased roughness of the former which has the lower binding energy compared with the temperature. 

S. Motakef, A.F. Witt, 1987, Thermoelastic analysis of GaAs in LEG growth configuration 1. Effect of liquid encapsulation on thermal stresses , J. Cryst. Growth 80, 37-50. 

Nevertheless, there is an increasing industrial interest in the use of Bridgman-type growth configurations because of the less-expensive equipment and the fact that the structural perfection of the single crystals is higher than that of crystals produced by Czochralski methods. The latter is mainly due to lower thermal stress that causes dislocations. 

Nowadays, Bridgman-type crystal-growth configurations are mainly applied for the industrial production of compound semiconductors like high-quality GaAs [7,... 

Virtual crystal growth, i.e. numerical simulation of the heat- and mass-transport processes has become a standard tool for the development and optimization of academic and industrial crystal-growth processes [5,18,19]. This holds especially for the optimization of Bridgman-type crystal-growth configurations. A typical crystal growth setup implies a vast variety of coupled and interacting physicochemical processes, which have all to be taken into account as accurately as possible to... 

Table 5.3 Estimation of the Peclet Number Pe According Eqs. (4.1) and (4.2) for Various Materials and Diameters of Bridgman-Type Growth Configurations with Bottom Seeding and Typical Parameters Cm = 3 K/cm, Ax = 5 mm.

In Bridgman-type crystal-growth configurations one possibility to control convection and therefore the shape of the solid/liquid interface, as well as the dopant distribution, is the so-called accelerated cmcible rotation technique (ACRT). This technique was developed by Scheel [56] and has been applied especially to the Bridgman growth of CdHgTe and CdZnTe crystals, e.g. [57, 58). 

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