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Encapsulated liquid

Solid/liquid (S/L) interface, surfactant adsorption at, 24 138-144 Solid-liquid encapsulation process, 16 444 Solid-liquid equilibria (SLE), 22 302 strategic separation schemes and, 22 310-311t... [Pg.865]

The liquid-encapsulated Czochralski process and the growth of III-V crystals... [Pg.609]

The so-called liquid-encapsulated Czochralski process, a modified version of the Czochralski method, is extensively used for preparing and growing III-V crystals. [Pg.609]

Fig. 4. Energy below the conduction band of levels reported in the literature for GaP. States are arranged from top to bottom chronologically, then by author. At the left is an indication of the method of sample growth or preparation liquid phase epitaxy (LPE), liquid encapsulated Czochralski (LEC), irradiated with 1-MeV electrons (1-MeV e), and vapor phase epitaxy (VPE). Next to this the experimental method is listed photoluminescence (PL), photoluminescence decay time (PLD), junction photocurrent (PCUR), photocapacitance (PCAP), transient capacitance (TCAP), thermally stimulated current (TSC), transient junction dark current (TC), deep level transient spectroscopy (DLTS), photoconductivity (PC), and optical absorption (OA). Fig. 4. Energy below the conduction band of levels reported in the literature for GaP. States are arranged from top to bottom chronologically, then by author. At the left is an indication of the method of sample growth or preparation liquid phase epitaxy (LPE), liquid encapsulated Czochralski (LEC), irradiated with 1-MeV electrons (1-MeV e), and vapor phase epitaxy (VPE). Next to this the experimental method is listed photoluminescence (PL), photoluminescence decay time (PLD), junction photocurrent (PCUR), photocapacitance (PCAP), transient capacitance (TCAP), thermally stimulated current (TSC), transient junction dark current (TC), deep level transient spectroscopy (DLTS), photoconductivity (PC), and optical absorption (OA).
LIQUID ENCAPSULATED CZOCHRALSKI (LEC Cz) INGOT GROWTH SYSTEM 174... [Pg.347]

Meniscus-Defined Crystal Growth Systems. In most conventional meniscus-defined growth systems, a seed crystal is dipped into a pool of melt, and the thermal environment is varied so that a crystal grows from the seed as it is pulled slowly out of the pool. Two examples of meniscus-defined growth are shown in Figure 1. The Czochralski (CZ) method (Figure lb) and the closely related liquid-encapsulated Czochralski (LEC) method are batchwise processes in which the crystal is pulled from a crucible with... [Pg.50]

Liquid encapsulation and potting compounds, e.g., for automotive parts Thermal and RT-curing adhesives, underfiller materials Composites, fiber-reinforced, e.g., for transportation or in printed wiring boards PCB build-up materials... [Pg.978]

Use Production of boron, heat-resistant glassware, fire-resistant additive for paints, electronics, liquid encapsulation techniques, herbicide. [Pg.174]

MAJOR PRODUCT APPLICATIONS rubber pads, liquid encapsulants, underfills, printed circuit boards, adhesives, greases, hquid coatings, aerosol sprays... [Pg.46]

Baikerikar and Scranton (2000) examined novel photopolymerizable liquid encapsulants (epoxy novolac-vinyl ester) filled with silica fillers. They found that the desired viscosity reduction occurred due to a blending of large and small particles, and that there was an optimum size distribution. A silane coating was also desirable, in order to reduce viscosity. [Pg.364]

A recent development in sealing technology has been liquid encapsulation microspray sealing (LEMS) in which a sealing fluid of approximately 50 percent water and 50 percent... [Pg.451]

AI3-51845 Boric acid (HBO2), anhydride Boric anhydride Boric oxide Boric oxide (B2O3) Boron oxide Boron sesquioxide Caswell No. 109B Diboron trioxide EINECS 215-125-8 Fused boric acid HSDB 1609. Used in production of boron, heat-resistant glassware, fire-resistant additive for paints, electronics, liquid encapsulation techniques, herbicide. White crystals mp = 450° bp = 1860° d = 2.46 soluble in H2O (3 g/100 ml) LDso (mus orl) = 3163 mg/kg. Atomergic Chemetals Lancaster Synthesis Co. Noah Chem. u.S. Borax Inc. [Pg.78]

One method that has been used for this case has employed a "liquid encapsulating agent". As shown in the following diagram, this consists of a lower melting agent used to form a liquid barrier, floating on the surface of the melt which serves as the source for the crystal (in this case, Ga-As). [Pg.297]


See other pages where Encapsulated liquid is mentioned: [Pg.304]    [Pg.270]    [Pg.463]    [Pg.527]    [Pg.610]    [Pg.228]    [Pg.269]    [Pg.272]    [Pg.246]    [Pg.304]    [Pg.50]    [Pg.52]    [Pg.101]    [Pg.448]    [Pg.248]    [Pg.269]    [Pg.272]    [Pg.586]    [Pg.586]    [Pg.1368]    [Pg.400]    [Pg.664]    [Pg.202]    [Pg.23]    [Pg.483]    [Pg.453]    [Pg.225]   
See also in sourсe #XX -- [ Pg.166 , Pg.227 , Pg.230 , Pg.256 ]




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