Bridgman crystal growth

Y. Y. Khine, J. S. Walker. Thermoelectric magnetohydrodynamic effects during Bridgman semiconductor crystal growth with a uniform axial magnetic field. J Cryst Growth 7 5 150, 1998. 

M. C. Liang, C. W. Fan. Three-dimensional thermocapillary and buoyancy convections and interface shape in horizontal Bridgman crystal growth. J Cryst Growth 180 5% , 1997. 

L. Davoust, R. Moreau, M. D. Cowley, P. A. Tanguy, F. Bertrand. Numerical and analytical modelling of the MHD buoyancy-driven flow in a Bridgman crystal growth configuration. J Cryst Growth 750 422, 1997. 

Figure 3.6 Methods for crystal growth from melt (a) Czochralski method (b) Kyropoulos method (c) Bridgman-Stockbarger method and (d) Vemeuil method.

Figure 1. Schematic diagrams of several commonly used systems for melt crystal growth of electronic materials (a) vertical Bridgman, (b) Czochralski, and (c) small-scale floating-zone systems.

Figure 3. Three spatial scales for modeling melt crystal growth, as exemplified by the vertical Bridgman system.

Figure 2. Three spatial scales for modeling melt crystal growth, as exemplified by the vertical Bridgman process. From Theory of Transport Processes in Single Crystal Growth from the Melt, by R. A. Brown, AJChE Journal, Vol. 34, No. 6, pp. 881-911, 1988, [29]. Reproduced by permission of the American Institute of Chemical Engineers copyright 1988 AIChE.

The next step is to produce nearly perfect single-crystal boules of silicon from the ultrapure polycrystalline silicon. Many techniques have been developed to accomplish this, and they all rely on a similar set of concepts that describe the transport process, thermodynamically controlled solubility, and kinetics [8]. Three important methods are the vertical Bridgman-Stockbarger, Czochralski, and floating zone processes, fully described in Fundamentals of Crystal Growth by Rosenberger [9]. 

Bulk Crystal Growth Czochralski Bridgman Float zone... 

Lan, C. W. (2005), Flow and segregation control by accelerated rotation for vertical Bridgman growth of cadmium zinc telluride ACRT versus vibration, J. Crystal Growth, 274 (3-4), 379-386. 

Conditions of crystal growth of selected materials by Bridgman and slow cooling techniques... 

Figure 1. Arrangement for crystal growth by the Bridgman method. (Courtesy of R. K. Route.)...

Fig. 9.6. Crystal growth according to the Bridgman-Slockbarger method...

Fig. 1.4 An anthracene single crystal made by the Bridgman crystal-growth method, then cleaved and polished. The length of the crystal is about 2 cm and its thickness 1 cm. Along the direction of sight in this photograph, the c direction, the strong double refraction is apparent. Image provided by N. Karl [1]. Cf the coloured plates in the Appendix.

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