Current modulated

Physical separation between eddy current functions and system functions, so that the system requirements (encoders amount, trigger specifications, robot control) can be changed without influence on the eddy current modules. 

Xu B, Xiao X, Yang X, Zang L, Tao N (2005) Large gate current modulation in a room temperature single molecule transistor. J Am Chem Soc 127 2386-2387... 

Kam Y. Lau and Amnon Yariv, High-Frequency Current Modulation of Semiconductor Injection Lasers... 

Takahashi, T., Forsythe, I. D., Tsujimoto, T., Barnes-Davies, M. and Onodera, K. Presynaptic calcium current modulation by a metabotropic glutamate receptor. Science 274 594-597,1996. 

Due to its zero-gap electronic stmcture, large graphene sheets are not suitable for FET applications [185, 193]. It has been shown that graphene transistors conduct current even at the point of expected isolator behavior (i.e., Dirac point) [288]. Therefore, current modulation cannot be achieved using macroscopic graphene sheets [185]. In order to have a band gap on graphene, the use of narrow ribbons of... 

Since the Hamiltonian for atoms in accelerated optical lattices is similar to the Legett Hamiltonian for current-biased Josephson junctions [37], the present theory has been extended to describe effects of current modulations on the rate of macroscopic quanmm tunneling in Josephson junctions in Ref. [11]. 

Equations (3.17) and (3.18) hold for electrochemical reactions of any reversibility degree. By comparing these equations with Eq. (3.19) corresponding to a reversible process, it can be inferred that the current for a non-reversible process is expressed as the reversible current modulated by F function (that contains the kinetic influence through the dimensionless parameter /), which increases with % from zero to the unity (see Fig. E.l of Appendix E). Hence, small values of % cause a strong kinetic influence and large values of x give rise to a reversible behavior. 

Typical transfer and output characteristics of a solution-processed pentacene FET with channel length L = 20 pm and W = 1000 pm are shown in Fig. 13.7. The characteristics were obtained under ambient conditions. The field effect mobility of the FET is 0.01 cm2 V-1 s-1 at Vg = —20 V. On less typical wafers mobilities as high as 0.25 cm2 V-1 s 1 have been observed. The drain current modulation 1d(Vd = —1 V, Vg = -20 V)/ID(VD = —1 V, VG = 10 V) of 10s is routinely obtained. By improving the uniformity and by reducing the parameter spread the integration level could be increased to about 103 transistors. 

Authors design the modules so that students are at the edge of scientific knowledge. By keeping the modules current, module authors provide the students with an authentic research experience. 

Rivera-Arconada I, Martinez-Gomez J, and Lopez-Garcia JA (2004) M-current modulators alter rat spinal nociceptive transmission an electrophysiological study in vitro. Neuropharmacology 46 598-606... 

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