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Germanium photodiode

Silicon photodiodes exhibit maximum sensitivity at about 800 nm and they can be used in the whole visible range however their sensitivity drops by several times at the blue region. Special structures can be made with enhanced blue sensitivity (so-called blue or UV diodes). Germanium photodiodes are capable to detect radiation from 600 nm up to 1700 nm. In telecommunication applications InGaAs elements are widely used. [Pg.56]

A. Lacaita, S. Cova, F. Zappa and P. A. Francese, Subnanosecond single-photon timing with commercially available germanium photodiodes, Opt. Lett. 18, 75-77 (1993). [Pg.416]

Emission at 12,700 A also indicates the production of 02(1 A). The intensity can be measured by a germanium photodiode cooled by liquid nitrogen in conjunction with a proper interference filter (351, 923, 1028). [Pg.30]

Infimed emission of O2 was measured with a liquid nitrogen cooled germanium photodiode detector (Model EO-817 L. North Coast Scientific co., Santa Rosa. CA) sensitive in the spectral region firom 800 nm to 1800 nm with a detector of 0.25 cm and a saphire window. Measurements were carried out in a cuvette with mirrored walls (35 mm x 6 mm x 55 mm). [Pg.884]

Photoluminescence spectra have b een measured at room temperature using a semiconductor laser as an excitation light source (10 W/cm at 980 run). Luminescence light has been collected by a lens condenser and then dispersed with a grating monochromator (MDR-23). Light detection was performed by a germanium photodiode DPD 2000 (Dilas Co.). A silicon filter was used to additionally cut off the excitation radiation. [Pg.40]

Indium arsenide and germanium photodiodes Indium arsenide photodiodes are used for the near-infrared region and typically cover 1800-3600 nm. They are destroyed by bias voltages in excess of 1V and are only separated in the photoconductive mode. They have a fast rise time ( 100 ns) and give excellent... [Pg.3494]

Takao Kaneda, Silicon and Germanium Avalanche Photodiodes... [Pg.652]

Figure 3.15 shows the spectral dependence of the specific detectivity, D, reported for germanium and indium arsenide photodiodes, respectively. The main properties of these detectors are also summarized in Table 3.1 for comparison. [Pg.91]

Figure 3.15 The specific sensitivities reported for germanium and indium arsenide photodiodes. Figure 3.15 The specific sensitivities reported for germanium and indium arsenide photodiodes.

See other pages where Germanium photodiode is mentioned: [Pg.383]    [Pg.320]    [Pg.322]    [Pg.246]    [Pg.274]    [Pg.676]    [Pg.956]    [Pg.3492]    [Pg.3492]    [Pg.3494]    [Pg.66]    [Pg.383]    [Pg.320]    [Pg.322]    [Pg.246]    [Pg.274]    [Pg.676]    [Pg.956]    [Pg.3492]    [Pg.3492]    [Pg.3494]    [Pg.66]    [Pg.290]    [Pg.210]    [Pg.424]    [Pg.313]    [Pg.761]    [Pg.267]    [Pg.842]    [Pg.165]    [Pg.193]    [Pg.408]    [Pg.296]    [Pg.290]    [Pg.210]    [Pg.377]    [Pg.58]    [Pg.380]    [Pg.184]    [Pg.58]    [Pg.585]    [Pg.623]    [Pg.313]    [Pg.104]    [Pg.290]    [Pg.933]    [Pg.24]    [Pg.129]   
See also in sourсe #XX -- [ Pg.91 , Pg.92 ]




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