Structure, germanium nitrides

In a further improvement, the NTD Ge spider-web bolometer developed by the Caltech/JPL group [69], and shown in Fig. 15.10, the absorber is a metallized silicon nitride spider-web structure, and the thermometer is a very small NTD germanium crystal [14], The spacing of the web pattern is much smaller than the wavelength, so it acts... 

Structure of the nitrides of silicon and germanium. Nature [London]... 

The reactions of germanium with oxygen and with nitrogen are reviewed. Particular emphasis has been placed on the relationship between the structure and electronic properties of the oxide and nitride films formed on single crystal germanium surfaces under different processing conditions. A summary of the electronic properties reported is presented and some conclusions are offered based on the recent literature. 

In principle, any material that can be obtained as a film by conventional CVD can be obtained as a fiber by LCVD and therefore by high pressure LCVD with relatively high growth rates. To date, chemically pure and structurally uniform boron, carbon, silicon, silicon nitride, silicon carbide and germanium fibers [2] [12-23] were formed (Table I), thereby potentially facilitating the development of a commercial process. 

CVD of boron nitride films on silicon or germanium or on printed circuit boards is now a common practice in the electronic industry [154 to 162]. The high thermal conductivity combined with the excellent electrical insulation properties are most valuable for these applications [163] see additional references in Section 4.1.1.10.8, p. 129. The use of a-BN layers is of particular importance in the manufacture of electrophotographic photoreceptors (such as solar cells) and of X-ray lithographic masks (see Section 4.1.1.10.8, p. 129). In the last mentioned application, structural aspects of the deposited films are of importance. In films still containing hydrogen, (N)H moieties are depleted by annealing at about 600°C, while (B)H moieties are depleted above 1000°C [164]. Also, elastic stiffness and thermal expansion of boron nitride films have to be viewed in connection with the temperature-dependent stress of CVD-deposited boron nitride films [165]. Reviews of properties and electronic applications of boron nitride layers have appeared in Polish [166] and Japanese [167]. 

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