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Germanium nitride

Germanium nitride, Ge3N4, is formed by the PECVD of germanium tetrakis(dime-thylamide) at temperatures as low as 190°C [181]. [Pg.383]

Miscellaneous Inorganic Compounds. Germanium nitride [12065-36-0], Ge N, is about as inert as tetragonal Ge02. It is prepared most... [Pg.278]

Germanium nitride (Ge3N4) from the ammonolysis of GeCl4. [Pg.288]

Germanium nitride, Ge3N2, is produced from the imine GeNH that forms when germanium iodide reacts with ammonia. [Pg.479]

Most nitride and oxynitride films are deposited at substrate temperatures much higher than 500°C. The formation reactions take place generally only between 900°C and 2500°C. Under such conditions, coating of glass is impossible. There are some exceptions, however, where it is possible to develop low temperature reactions. Thus, for instance, amorphous germanium nitride Ge3N4 has been deposited by ammonolysis of GeCl4 at substrate temperatures between 400 and 600°C [143]. Such films can be used in electronics [144]. [Pg.144]

Table III. Unit Cell Dimensions for Germanium Nitrides ... Table III. Unit Cell Dimensions for Germanium Nitrides ...
See other pages where Germanium nitride is mentioned: [Pg.439]    [Pg.51]    [Pg.399]    [Pg.220]    [Pg.439]    [Pg.161]    [Pg.1568]    [Pg.1568]    [Pg.1618]    [Pg.557]    [Pg.28]    [Pg.29]    [Pg.301]    [Pg.264]    [Pg.538]    [Pg.368]    [Pg.383]    [Pg.1617]    [Pg.722]    [Pg.179]    [Pg.179]    [Pg.179]    [Pg.195]    [Pg.195]    [Pg.196]    [Pg.196]    [Pg.197]    [Pg.197]    [Pg.197]    [Pg.197]    [Pg.198]    [Pg.199]    [Pg.199]    [Pg.201]    [Pg.201]    [Pg.202]    [Pg.206]   
See also in sourсe #XX -- [ Pg.479 ]

See also in sourсe #XX -- [ Pg.1568 ]

See also in sourсe #XX -- [ Pg.1568 ]

See also in sourсe #XX -- [ Pg.2 , Pg.161 ]

See also in sourсe #XX -- [ Pg.2 , Pg.161 ]

See also in sourсe #XX -- [ Pg.16 ]



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Germanium nitride formation

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Germanium nitride structure

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