Germanium electronic properties

The physical, thermal, and electronic properties of germanium metal are shown in Table 1. Optical properties are given in Table 2. 

ELECTRONIC PROPERTIES DOPED SILICON AND GERMANIUM AS EXAMPLES 7... 

The electronic properties of germanium have led to an interest in incorporating the element into extended polymeric chains due to the intrinsic properties of the polymers themselves or in their use as precursors for material synth-esis. Catalytic co-polymerization of the germylene Ge[N(SiMe3)2]2 with various substituted acetylenes leads to... 

The review is divided into sections according to the type of metal hydride for convenience in discussing the information systematically. At one extreme, kinetic studies have been performed with many types of silicon hydrides, and much of the data can be interpreted in terms of the electronic properties of the silanes imparted by substituents. At the other extreme, kinetic studies of tin hydrides are limited to a few stannanes, but the rate constants of reactions of a wide range of radical types with the archetypal tin hydride, tributylstannane, are available. Kinetic isotope effects for the various hydrides are collected in a short section, and this is followed by a section that compares the kinetics of reactions of silicon, germanium, and tin hydrides. 

S. A. Ringel and P. N. Grillot, Electronic Properties and Deep Levels in Germanium-Silicon J. C. Campbell, Optoelectronics in Silicon and Germanium Silicon... 

Results from gas chemisorption, catalytic testing, and TPR and TPD experiments demonstrate that after H2 reduction at 773 K a part of tin (germanium) cations reduces and forms a metallic Pt-Sn(Ge) alloy. Alloying does not increase the thiotolerance of Pt-Sn catalysts compared to monometallic Pt catalyst. On the contrary, alloying enhances the thiotolerance of Pt in Pt-Ge catalysts because the formation of Pt-Ge clusters changes the electronic properties of Pt, via electron withdrawal by the reduced Ge ions. 

Anion photoelectron spectra of small germanium clusters (n = 2 -15) have been nsed to determine electronic properties and the most stable geometric configuration for Ge anions. ... 

In practice, nothing is absolutely pure, so the word substance is an idealization. Among the purest materials ever prepared are silicon (Fig. 1.5) and germa-ninm. These elements are used in electronic devices and solar cells, and their electronic properties require either high purity or else precisely controlled concentrations of deliberately added impurities. Meticulous chemical and physical methods have enabled scientists to prepare germanium and silicon with concentrations less than one part per billion of impurities. Anything more would alter their electrical properties. 

An evoked possibility of n-type doping of diamond with sulphur [219] has aroused an interest for the electronic properties of this element in diamond. It is now well established that, as expected from the properties of chalcogens in silicon and germanium, S behaves in diamond as a deep donor, with an ionization energy of 1 eV for S°, predicted from the ab initio DFT calculations [177]. However, the existence of S-related complexes with native defects or impurities like B is a possibility which could explain some appealing experimental results ([37], and references therein). 

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