Gate oxide integrity

Fig. 12. Gate oxide integrity for ship qualification hardware.

GOI Gate oxide integrity TEAMS Trace element accelerator mass... 

In this chapter our work is described that deals with the development of chemically modified Field Effect Transistors (CHEMFETs) that are able to transduce chemical information from an aqueous solution directly into electronic signals. The emphasis of this part of our work will be on the materials that are required for the attachment of synthetic receptor molecules to the gate oxide surface of the Field Effect Transistor. In addition the integration of all individual components into one defined chemical system will be described. Finally, several examples of cation selective sensors that have resulted from our work will be presented. 

Silane based CVD-WSi2 has been applied very successfully for years in several kinds of IC s. As mentioned earlier in this chapter the CVD deposition process has proven to be a good alternative for physical vapor deposition techniques. However, with the increasing integration and the accompanying decrease in gate width and gate oxide thickness, two problems become visible ... 

The main difference between the JFET and the MOSFET is that the gate on the MOSEET, which is the input to the FET, is insulated by a thin dielectric material (silicon dioxide, referred to as gate oxide) from the other two electrodes of the transistor. In contrast, the gate of the JFET forms a physical p-n junction with the other electrodes of the transistor. JFETs are used extensively in GaAs integrated circuits. ... 

In the processing of integrated circuits, silicon dioxide (SiOa) can be used as a mask during ion implantation or diffusion of impurity into silicon, for passivation, for protection of the device surface, as interlayers for multilevel metallization, or as the active insulating material — the gate oxide film in metal-oxide-semiconductor (MOS) devices [1, 2], At the present time, several methods have been developed for the formation of Si02 layers, including thermal and chemical oxidation, anodization in electrolyte solutions, and various chemical vapor deposition (CVD) techniques [2, 3],... 

ROICs, like all integrated circuits, are subject to damage by ESD. As silicon circuit feature sizes get finer, gate oxides become thinner and more prone to damage. Even though ESD protection features are included in most ROICs (see Section 7.2.11), devices should be handled so as to minimize exposure to ESD. 

The thin films used in electronic device fabrication can have a thickness in the range of 0.02 am (200 A), which means that sub-micrometre particles can have a disastrous effect on device yields. In fact, particle generated pinholes in thin gate oxide films are one of the major causes of low yields in most integrated circuit production. 

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