Gate dielectric materials, selecting

Another consideration for gate dielectrics is selecting materials which provide interesting device functionalities. 

Many materials systems are currently under consideration as potential replacements for Si02 as the gate dielectric material for sub-0.l-ftm CMOS technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band... 

Another key issue for ZnO TFTs is the selection of the gate insulator. Various gate dielectric materials have been tested for ZnO-based TFTs, such as Si02 [162], Hf02 [169], PbZrTiO [185], ZnMgO [186], and Y2O3 [184]. As an example, TTFTs with transparent oxide semiconductor ZnO serving as the electron channel and... 

This chapter will focus on the selection and design of the gate dielectric, which is the insulating material separating the active semiconducting material from the... 

A large variety of materials have been used as OFET gate dielectrics. A number of considerations typically go into the process of gate dielectric selection including ... 

In addition, however, the device layouts of the employed OFETs are identical and differ simply by the selective UV treatment of the PMMA gate dielectric. This simplifies the manufacturing of logic elements and thus reduces the production cost, being an advantage if compared to inverters were field-effect transistors with different functional materials have been employed. 

A polymer sensor is a particular type of transistor where a sensor material is in contact with the dielectric gate, the dielectric layer or the semiconductive layer. The sensor responds to the presence of an analyte by selectively adsorbing it and then inducing a change in the channel conductivity through an electrostatic field effect (34). 

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