Gallium thin films

The covalent nature of III-V materials causes problems for preparation of highly crystalline nanoparticles and thin films. A single-molecular precursor approach was employed to produce III-V nanoparticles of InP and GaP using the indium/gallium diorganophosphide compounds... 

Albin, D. Noufi, R. Tuttle, J. Goral, J. Risbud, S. H. 1988. Composition-structure relationships for multisource evaporated copper gallium selenide (CuGaSe2) thin films. J. Appl. Phys. 64 4903 1908. 

The deposition of CBD CdS as a junction layer for solar cell devices has proven to be a very successful industrially acceptable technique. Kessler et al.13 reported on copper indium gallium diselenide (CIGS) mini-modules (area = 16cm2) with a conversion efficiency of 16.6%, wherein CBD CdS was used as a junction layer. Basol et al.14 fabricated 9.3% active-area efficient thin-film flexible CuInSe2 (CIS) solar cells (specific power >1 kW/kg) on lightweight, flexible metallic, and polymeric (polymide-based) substrates using CBD CdS. 

Mehlin, M. Rammasch, J. Fritz, FI. P. 1994. Preparation of CuGaSe2 thin-film solar-cells comprising an electrochemical gallium deposition step. Zeitschrift Fur. Naturforschung 49b 1597-1605. 

Manasevit A process for making electronic devices by depositing thin films of elements or simple compounds such as gallium arsenide on flat substrates by CVD from volatile compounds such as trimethyl gallium and arsine. 

J. Hu and R.G. Gordon, Atmospheric pressure chemical vapor deposition of gallium doped zinc oxide thin films from diethyl zinc, water, and triethyl gallium, J. Appl. Phys., 72 5381-5392, 1992. 

There are three main thin-film PV cells under development at present amorphous Si, CdTe/CdS, and Cl(G)S/CdS [C1(G)S refers to copper indium (gallium) selenide]. Of these, the last two are polycrystalline (as opposed to amorphous), and both normally employ CD CdS. Crystalline Si cells are not thin films, being at least tens and usually hundreds of microns in thickness, compared to the few microns of active thickness of the thin-fihn cells. 

The trimethylamine adduct of aluminum hydride (alane) has been of recent interest as a precursor for the chemical vapor deposition (CVD) of aluminum metal1 and aluminum gallium arsenide thin films.2 Because of the absence of aluminum-carbon covalent bonds in the precursor, carbon incorporation in the resulting films can be suppressed significantly. In addition, the deposition temperature can be lowered. 

Donor adducts of aluminum and gallium trihydride were the subject of considerable interest in the late 1960s and early 1970s.1 Thin-film deposition and microelectronic device fabrication has been the driving force for the recent resurgence of synthetic and theoretical interest in these adducts of alane and gallane.24 This is directly attributable to their utility as low-temperature, relatively stable precursors for both conventional and laser-assisted CVD,59 and has resulted in the commercial availability of at least one adduct of alane. The absence of direct metal-carbon bonds in adducts of metal hydrides can minimize the formation of deleterious carbonaceous material during applications of CVD techniques, in contrast to some metal alkyl species.10, 11... 

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