Free carriers wafers

A variety of experimental measurements can be used to determine free carrier densities (and thus dopant levels) in semiconductors. Four-point probe resistivity measurements are the most common because they are relatively painless, nondestructive, and can be performed on thin wafers. There is more to them than meets the eye, however. 

Porous silicon (por-Si) formed by electrochemical etching of (llO)-oriented p-type Si wafers is an example of novel nanostructured medium with controllable optical properties. It was found to exhibit the strong in-plane birefringence (up to 18 %) and free-carrier dichroism [1-5]. Both phenomena originate from the form anisotropy of Si nanocrystals and voids assembling the material [3-5]. Below, we report the analysis of the dichroism in por-Si on the basis of the generalized effective-medium approximation (EMA) [7] as well as prominent anisotropy of absorption by silicon-hydrogen surface bonds. 

Silicon wafer has been extensively used in the semiconductor industry. CMP of silicon is one of the key technologies to obtain a smooth, defect-free, and high reflecting silicon surfaces in microelectronic device patterning. Silicon surface qualities have a direct effect on physical properties, such as breakdown point, interface state, and minority carrier lifetime, etc. Cook et al. [54] considered the chemical processes involved in the polishing of glass and extended it to the polishing of silicon wafer. They presented the chemical process which occurs by the interaction of the silicon layer and the... 

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