Device parameters

Minimum exposure times must be observed in order to reach the requisite S/N ratio. As per EN 1435 and EN 584-1, for the different ranges of utilization (energy, wall thickness), definite film elasses are prescribed. They are characterized by the minimum gradient-to-noise ratios. Based on this, one can calculate the minimum values for the S/N ratio based on the IP systems. The exposure time and the device parameter sensitivity and dynamics (latitude) must be adjusted accordingly, with an availability of an at least 12 bit system for the digitalization. 

There are relationships between the independent size separation device parameters and the dependent size separation efficiencies. For example, the apparent bypass value does not affect the size distribution of the fine stream but does affect the circulation ratio, ie, the ratio of the coarse stream flow rate to the fine stream flow rate. The circulation ratio increases as the apparent bypass increases and the sharpness index decreases. Consequendy, the yield, the inverse of the circulating load (the ratio of the feed stream flow rate to the fine stream flow rate or the circulation ratio plus one), decreases hence the efficiencies decrease. For a device having a sharpness index of 1, the recovery efficiency is equal to (1 — a). 

However, the values for the current, which are obtained using the Fowler-Nordheim equation with the actual device parameters, are several orders of magnitude [81, 82) higher than the values for the measured current in real devices. 

For typical polymer LED device parameters, currenl is space charge limited if the energy barrier to injection is less than about 0.3-0.4 eV and contact limited if it is laiger than that. Injection currents have a component due to thermionic emission and a component due to tunneling. Both thermionic emission and tunneling... 

Sterilization method Principle Device Parameter(s) monitored... 

Host Polymer Device Parameter of 2% Ir Complex-Doping Cone. 

Like any sequence of events, an FFC experiment can be intended as a sequence of elementary intervals during each of which all system control lines maintain constant values. One needs to keep in mind, however, that while a control line transition is always very fast (settling times of the order of Ins), the controlled device/parameter may require a much longer... 

Weidemann et al. found that wet etching of a GaN surface before Pd deposition also produced an interfacial oxide, which increased the hydrogen sensitivity by approximately a factor of 50 [14], They concluded that comparing device parameters between different GaN Schottky diode gas sensors requires a defined standard treatment of the GaN surface to introduce a controlled interfacial oxide. 

Palmour, J. W., H. S. Kong, and R. F. Davis, Characterization of Device Parameters in High-Temperature Metal-Oxide-Semiconductor Field-Effect Transistors in fi-SiC Thin Films, J. of Applied Physics, Vol. 64, No. 4, August 15, 1988, pp. 2168-2177. 

For interdigitated transistor structures, the device parameters in the previous formula can be further expressed in terms of the transistor structure parameters [22]. Thus we have,... 

There are two ways to look at this circuit One is that this is a self-biasing circuit for a BJT amplifier. If this were an amplifier, the load would most likely be a resistor. (The term "self-bias means that the goal of the circuit is to make the collector current independent of device parameters such as Hfe and Vbe.). The second way to look at the circuit is that as far as the load is concerned, Ql, Rl, R2, and R3 form a current source that is, the current through the load is determined by Ql. Rl, R2, and R3. If this circuit were designed as a current source for the load, we could view the circuit as ... 

The Monte Carlo analyses are used to observe how device tolerances can affect a design. There are two analyses that can be performed. The Worst Case analysis is used to find the maximum or minimum value of a parameter given device tolerances. Device tolerances are varied to their maximum or minimum limits such that the maximum or minimum of the specified parameter is found. The Monte Carlo analysis is used to find production yield. If the Worst Case analysis shows that not all designs will pass a specific criterion, the Monte Carlo analysis can be used to estimate what percentage will pass. The Monte Carlo analysis varies device parameters within the specified tolerance. The analysis randomly picks a value for each device that has tolerance and simulates the circuit using the random values. A specified output can be observed. 

Stein SW, Myrdal PB. A theoretical and experimental analysis of formulation and device parameters affecting solution MDI size distributions. J Pharma Sci 2004 93(8) 2158-2175. 

Table 3.4.1 FPW Density Determinations for Low-Viscosity Liquids [62]. Velocity of Sound in Fluid is Denoted by vp. The Measured Frequencies for Air Loading and Methanol Loading Yielded the Device Parameters M = 6.411 x 10 kg/m and Tx + B 539.2 N/m Used in Calculating Predicted Responses for...

Organic LEDs tunable from blue to red emission controlled by the voltage,56,92-96 current, local temperature, or another device parameter... 

Fig. 5.2 Effect of treatment time on the skin permeation profile of ACV (finite dose) from a topical preparation using rotating device with brush B and constant device parameters (speed, 80rpm pressure, 300N m 0 [( ) untreated, ( ) 10s, ( ) 30s and (a) 60s]. Data represent mean SE (n > 4), and error bars not shown are within size of symbol...

Device parameters (speed, SOrpm pressure, 300 N m ) were maintained constant... 

Mihailetchi et al, 2004), when the electrodes of the device make ohmic contacts with the acceptor and donor materials. Progress in nnderstanding the origin of the open-circuit voltage of organic solar cells and its dependence on device parameters will be discussed in Section 7.6.2 below. 

Relationship between material and device parameters and photovoltaic performance... 

In this section, we review the basic device physics of organic donor-acceptor solar cells and identify the key material and device parameters that should be addressed in order to improve power conversion efficiency. 

Peyghambarian et al. modeled the dependence of the current flow and the efficiency of devices on various device parameters as the (balance of the) charge carrier mobility and the barrier height at the interfaces for devices, where the current flow is determined by Fowler-Nordheim tunneling (see Fig. 9-24) [83]. In this case, the current flow through the LEDs is injection limited and dominated by Fowler-Nordheim tunneling and the following characteristics are observed [83] ... 

One of the easiest ways to visualize the material and device characteristics that need to be measured is to consider a semiconductor device. For this I have chosen in Figure 1 a metal-oxide-semiconductor field-effect transistor (MOSFET) as representative of a typical semiconductor device. Indicated on it are the important material and device parameters that need to be measured. Only some of them are addressed in this chapter. Other devices could have been chosen, but the MOSFET incorporates most ot the parameters of interest and is the most coismon integrated circuit device. 

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