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Silicon carbide fabrication

Isothermal Infiltration. Several infiltration procedures have been developed, which are shown schematically in Fig. 5.15.P3] In isothermal infiltration (5.15a), the gases surround the porous substrate and enter by diffusion. The concentration of reactants is higher toward the outside of the porous substrate, and deposition occurs preferentially in the outer portions forming a skin which impedes further infiltration. It is often necessary to interrupt the process and remove the skin by machining so that the interior of the substrate may be densified. In spite of this limitation, isothermal infiltration is used widely because it lends itself well to simultaneous processing of a great number of parts in large furnaces. It is used for the fabrication of carbon-carbon composites for aircraft brakes and silicon carbide composites for aerospace applications (see Ch. 19). [Pg.130]

CVD is a maj or process in the production of thin films of all three categories of electronic materials semiconductors, conductors, and insulators. In this chapter, the role of CVD in the fabrication of semiconductors is reviewed. The CVD production of insulators, conductors, and diffusion barriers is reviewed in the following chapter. The major semiconductor materials in production or development are silicon, germanium, ni-V and II-VI compounds, silicon carbide, and diamond. [Pg.352]

Other organosilicon polymer precursors for ceramics have either been prepared or improved by means of transition metal complex-catalyzed chemistry. For instance, the Nicalon silicon carbide-based ceramic fibers are fabricated from a polycarbosilane that is produced by thermal rearrangement of poly(dimethylsilylene) [18]. The CH3(H)SiCH2 group is the major constituent of this polycarbosilane. [Pg.272]

Micropipes, silicon carbide, 22 532 Micropipette solution deposition fabrication method for inorganic materials, 7 415t... [Pg.585]

Use of the ceramic honeycomb packing structure in the recuperator keeps fuel and air substantially isolated as they travel through the recuperator. Various ceramic materials such as cordierite, mullite, alumina and silicon carbide can be used to fabricate honeycomb beds. While metallic materials have the potential to be used in honeycomb bed, corrosion resistance is a major issue... [Pg.139]

High Temperature. The low coefficient of thermal expansion and high thermal conductivity of silicon carbide bestow it with excellent thermal shock resistance. Combined with its outstanding corrosion resistance, it is used in heat-transfer components such as recuperator tubes, and furnace components such as thermocouple protection tubes, cmcibles, and burner components. Silicon carbide is being used for prototype automotive gas turbine engine components such as transition ducts, combustor baffles, and pilot combustor support (145). It is also being used in the fabrication of rotors, vanes, vortex, and combustor. [Pg.468]

Silicon carbide s relatively low neutron cross section and good resistance to radiation damage make it useful in some of its new forms in nuclear reactors (qv). Silicon carbide temperature-sensing devices and structural shapes fabricated from the new dense types are expected to have increased stability. Silicon carbide coatings (qv) may be applied to nuclear fuel elements, especially those of pebble-bed reactors, or silicon carbide may be incorporated as a matrix in these elements (153,154). [Pg.469]

As observed by D. Johnson and J. Stiegler, "Polymer-precursor routes lor fabricating ceramics offer one potential means or producing reliable, cost-effective ceramics. Pyrolysis of polymeric metalloorganic compounds can be used to produce a wide variety of ceramic materials." Silicon carbide and silicon oxycarbide fibers have been produced and sol gel methods have been used In prepare line oxide ceramic powders, such as spherical alumina, as well as porous and fully dense monolithic forms. [Pg.318]

The conventional industrial method for the synthesis of a-silicon carbide is to heat silica (sand) with coke in an electric furnace at 2,000-2,500 °C. However, because of the high melting point of the product, it is difficult to fabricate by sintering or melt techniques. Thus, the discovery of a lower temperature fabrication and synthesis route to silicon carbide by Yajima and coworkers in 197526,27 proved to be an important technological breakthrough. This is a preceramic polymer pyrolysis route that has been developed commercially for the production of ceramic fibers. [Pg.320]

The traditional synthesis route involves the direct reaction of silicon with nitrogen at temperatures above 1,300 °C, or by heating silica with carbon (coke) in a stream of nitrogen and hydrogen at 1,500 °C.41 However, as in the case of silicon carbide, the high processing and fabrication temperatures focused attention on the need for alternative access routes based on preceramic polymers. [Pg.324]

Poorteman, M., Descamps, P., Cambier, F., Plisnier, M., Canonne, V., Descamps, J.C., Silicon nitride/silicon carbide nanocomposite obtained by nitridation of SiC fabrication and high temperature mechanical properties, J. Eur. Ceram. Soc., 23, 2003, 2361-2366. [Pg.535]

Forrest, C.W., Kennedy, P. and Shennan, J.V. (1972) The fabrication and properties of self-bonded silicon carbide bodies, in Special Ceramics 5, The British Ceramic Research Association, Stoke-on Trent, UK. [Pg.240]

Fillers used in large quantities to reinforce plastics are alumina (aluminum oxide), calcium carbonate, calcium silicate, cellulose flock, cotton (different forms), short glass fiber, glass beads, glass spheres, graphite, iron oxide powder, mica, quartz, sisal, silicon carbide, dtanium oxide, and tungsten carbide. Choice of filler varies and depends to a great extent upon the requirements of the end item and method of fabrication. [Pg.465]

There are some commercially available gripping systems which may, or may not, meet the needs of composites testing. They include self-aligning grips capable of operating at temperatures up to 1600°C and frilly articulated fixtures fabricated from silicon carbide which are good at temperatures up to 1500°C. [Pg.392]


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See also in sourсe #XX -- [ Pg.138 ]




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