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Sample etching

Mg yA1 2> or P-(MgAl). Thus aluminum occurs in magnesium alloys both in soHd solution and as the intermediary intermetaUic phase. The latter is clear white and in slight rehef in poHshed and etched samples. In as-cast alloys, the hard phase occurs in massive form, but when precipitated from sohd solution a lamellar stmcture is formed similar to peadite in steel. When produced by aging at low temperatures, it appears as fine particles. [Pg.330]

The IBM group (Marwick et al., 1987, 1988) studied both the boron and deuterium sites in B-2H complexes using the 2H(3He, pa) and 11B(1H, a) nuclear reactions respectively. The optimum results were obtained with a 30 keV B implant of 1015 cm-2. Figure 8 shows SIMS profiles of the 2H and nB in a typical sample used in their work. A near-surface layer with excess hydrogen remains even after etching off 1000 A of the surface (the figure shows SIMS data from the etched sample). Deeper in, the B and H concentrations are the same within the error in the SIMS calibration, consistent with B—H pair formation. The horizontal lines on the plot show... [Pg.224]

This arrangement changes drastically after inspection of the etched sample. The deep large voids designate the areas of isotropic phase (see Fig. 9.1 phase (b)). It further highlights that the anisotropic well-crystallized graphene layers adhere strongly only in a thin rim around the fiber axis. The immediate interface is also quite reactive to... [Pg.264]

Depth profile and total content of oxygen in PE was determined by RBS method. The profiles of plasma-treated sample and that subsequently etched in water are compared in Figure 9. The mean oxygen contents in the surface layer accesible by RBS, ca 140 nm thick, are (39 5) and (28 3).10 cm" for plasma-treated and water etched samples respectively. Both concentration profiles exhibit a maximum at the depth of ca 20 nm, further the concentration decreases slowly, falling to negligible concentrations at 60 nm. Similar trend was observed in previous report dealing with PE exposed to Ar plasma at the power of 1.7 W [70]. [Pg.32]

Figure 12. Coal of 28.6% volatile matter daf heated at 375°C. in dilatometer. (A) unetched sample. (B) etched sample. Magnification 220 X, oil immersion... Figure 12. Coal of 28.6% volatile matter daf heated at 375°C. in dilatometer. (A) unetched sample. (B) etched sample. Magnification 220 X, oil immersion...
After quick freezing in liquid nitrogen and fracture, another etching method was used at — 90 °C for less than 1 min in a 1.33 x 10-4 Pa chamber. The etched sample was cooled to — 130°C and coated with platinum and carbon in the same vacuum chamber and transferred to the scanning electron microscope at — 130 °C. The observed structure was closer to reality than that obtained by the method previously described. This is called the cryo-SEM technique [32]. CryoSEM images are shown in Fig. 4 which presents the structural change by stretching [16]. [Pg.247]

Figure 4. Si wei-etched samples with resist removed, in (al the substrate was treated with VTS, while in (b) the control wafer had no organosilane treatment. Figure 4. Si wei-etched samples with resist removed, in (al the substrate was treated with VTS, while in (b) the control wafer had no organosilane treatment.
Figure 2.15 Ne three-isotope plot for a grain-size suite of plagioclase separates from lunar high land soil that were treated by the CSSE treatment (see text). The best fitted line through the data from all etched samples (line p) passes close to the data point GCR (galactic cosmic ray) of cosmogenic Ne. On the left side, the path of mass fractionation of SWC (solar wind composition)-Ne intersects line p at a 20Ne/22Ne ratio of -11.3, which is interpreted to represent SEP (solar energetic particle) Ne (cf. Section 2.8). Open symbols unetched sample. Solid symbols etched samples. SF Solar flare Ne. Reproduced from Signer et al. (1993). Figure 2.15 Ne three-isotope plot for a grain-size suite of plagioclase separates from lunar high land soil that were treated by the CSSE treatment (see text). The best fitted line through the data from all etched samples (line p) passes close to the data point GCR (galactic cosmic ray) of cosmogenic Ne. On the left side, the path of mass fractionation of SWC (solar wind composition)-Ne intersects line p at a 20Ne/22Ne ratio of -11.3, which is interpreted to represent SEP (solar energetic particle) Ne (cf. Section 2.8). Open symbols unetched sample. Solid symbols etched samples. SF Solar flare Ne. Reproduced from Signer et al. (1993).
Texture analysis is illustrated in Figure 11 which shows the gray level distribution for a polished and etched sample of tungsten carbide material. From this distribution one can obtain the mean and standard deviation of the texture. In addition, the n value indicates the sharpness of the image. [Pg.14]

Sample la Sample 1 (etched) Sample 2b Sample 2 (etched) Au foil Sn foil... [Pg.153]

Nascent powder morphologies of both the nascent and etched samples observed by SEM are shown in Figure 12 for the nascent and 4- and 12-month-etched UHMW-PE powders.24 Unique "cobweb" structures, composed of globules and fibrils, are often observed on the surfaces of nascent PE powders.2 26 27 43 44 In Figure 12A, very few fibrils are observed for the nascent powder. The paste-like morphologies cover the surface of this nascent powder. The major powder structure... [Pg.221]

Figure 10.3. XTEM images of sample B prepared by etching sample A using hydrogen plasma for 5 min. Magnification (a) x 400000 and (b) x 3200000 [208]. Figure 10.3. XTEM images of sample B prepared by etching sample A using hydrogen plasma for 5 min. Magnification (a) x 400000 and (b) x 3200000 [208].
FIGURE 2.30. Mott-Schottky plots in 5% HF for mechanically polished n-type silicon and chemically etched sample. After De Mierry et a/. "... [Pg.79]

Etched samples were removed, the etching solution was diluted with deionized water to a very low concentration, and electron microscope grids were prepared by platinum shadowing. Similarly, a less dilute solution (from the etching of sample E-5) was placed on a clean microscope slide, allowed to dry, and examined under the SEM. [Pg.161]

Figure 2. Scanning electron micrographs of 7-hr-etched samples having different stoichiometric ratio of MDA to Epon 828 (A) 0.7/1 (B) 0.8/1 (C) 1/1 (D) 1.1/1... Figure 2. Scanning electron micrographs of 7-hr-etched samples having different stoichiometric ratio of MDA to Epon 828 (A) 0.7/1 (B) 0.8/1 (C) 1/1 (D) 1.1/1...

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Etching microscopic samples

Sample Preparation Etching and Staining

Scanning electron microscopy sample etching

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