Etching removal

Hydrogen fluoride Glass etching, removal of High... 

Wet etching removes the insulating film and the indium layer from regions which become nonpixel regions 2a. 

These authors found that it was possible to deposit amorphous films whose Ta concentration ranged from 10 to 80 mol % by changing the reactive gas mix. Another feature of the films was that under certain conditions they contained substantial quantities of chlorine and hydrogen. Also, they did not adhere to either silicon or silicon dioxide after annealing (argon atmosphere for 1 hour at 900°C). When the substrates were dry etched in an HCI plasma for 2 minutes, they adhered to the substrate even after annealing. Since this etch removed about 50 A, it appears that the native oxide on the silicon and/or some other surface impurities on both the silicon and silicon dioxide were causing the lack of adhesion. 

Tanaka S., Brnce J. A. and Wrighton M. S. (1981), Deliberate modification of the behavior of n-type cadmium telluride/electrolyte interfaces by surface etching removal of Fermi level pinning , J. Phys. Chem. 85, 3778-3787. 

FIGURE 5.5.32 Schematic of nanoimprint hthography (NIL). (1) A rigid mold is pressed into a thermoplastic resist, heated above its glass transition temperature, to create an imprint. (2) The mold is removed, leaving behind the patterned resist. (3) An anisotropic etch removes the residual resist and transfers the pattern into the substrate. (From S. Y. Chou et al., J. Vac. Sci. Technol, B, 14, 4129, 1996.)... 

CV200RF YES- CV200RFS Automatic strip/descum Variable power settings 150-1,250 W photoresist or polyimide layers surface etching removal of organic materials 7,000 A/minute... 

However, chemical etching removes the layers of transformed phases and residual stress, both in the top surface and edge surface. 

Solvent etch remove weak boundary layer M, P... 

Active gas corrosion is a gas-solid kinetic process involving etching (removal) of a solid surface by a corrosive gas species. The rate of this corrosion process depends on both the rate of transport of gases to/from the solid surface and the rate of the corrosion reaction on the solid surface. Depending on the temperature and pressure conditions, either the gas diffusion or the surface reaction process can limit the overall corrosion rate. An overall corrosion rate can be derived which takes into account both processes according to... 

Electroless etching removes valence electrons by the action of a solution phase oxidizing agent. The oxidant injects holes into the valence band and is reduced in the process of this open-circuit etching. 

Transfer pattern to implanted films using oxygen plasma etching remove photoresist. 

Tibbetts et al. showed that oxidative pretreatment of vapor-grown carbon fibers (VGCF) can reduce the capacity of SEI forming in LiClOyPC electrolyte by an order of magnitude. Their experiments confirm the idea that air etching removes the more active carbon atoms — those capable of decomposing the electrolyte — and completely alters the fiber morphology. 

Etch removal of the loose surface, gasification, and removal of surface oxidation products in the liquid-phase volume. 

Fig. 7.17. Rocking curves for single- and triple-bounce crystals. A Cd absorber prevents neutron propagation inside the Si walls and improves the USANS sensitivity. Etching removes the surface imperfections and further enhances the signal-to-noise ratio. (Reproduced with permission from [95]. Copyright 1997 International...

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