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Energy bands conduction band

With insulators or semiconductors, the valence band is completely filled and is separated from the next highest allowable energy band (conduction band) by a gap (or forbidden band). In order for valence electrons to be raised into the conduction band, they must be given a sizable amount of energy. With insulators this gap corresponds to several electron volts. For semiconductors the gap is sufficiently small so that a significant number of electrons can acquire the necessary additional energy by thermal means at room temperature. [Pg.61]

Metal - A material in which the highest occupied energy band (conduction band) is only partially filled with electrons. The electrical conductivity of metals generally decreases with temperature. [Pg.110]

Metals have only a few valence electrons in the outer shell, usually no more than 4. These are given up during a chemical reaction to form metallic, positive ions. Metals form structures that have many nearest neighbors. They are solids with high coordination numbers and in which the highest occupied energy band (conduction band) is only partially filled with electrons. The electrical conductivity of metals generally decreases with temperature. For more information about the conduction band, you can read up on molecular orbital theory in Chapter 6. [Pg.134]

If the cross-coupling is strong enough this may include a transition to a lower electronic level, such as an excited triplet state, a lower energy indirect conduction band, or a localized impurity level. A common occurrence in insulators and semiconductors is the formation of a bound state between an electron and a hole (called... [Pg.374]

Fig. 14 (a) Equilibrium energy diagram for a pn junction in an inorganic semiconductor material with intrinsic Fermi energy Ep , conduction band energy E, valence band energy The quantity Vu... [Pg.196]

G. F. NEUMARK AND K. KOSAI ENERGY BELOW CONDUCTION BAND (eV)... [Pg.22]

Figure 6. Calculated changes in the ratios of ionized vacancies to neutral vacancies at 300 and 1400 K. Abbreviations Ev, valence band energy EF, Fermi energy Ec, conduction band energy. (Reproduced with permission from reference 119. Copyright 1981 Academic Press.)... Figure 6. Calculated changes in the ratios of ionized vacancies to neutral vacancies at 300 and 1400 K. Abbreviations Ev, valence band energy EF, Fermi energy Ec, conduction band energy. (Reproduced with permission from reference 119. Copyright 1981 Academic Press.)...
It should be noted that more complex molecules than CO (e.g., methanol) produce many kinds of intermediates in the course of the catalytic oxidation, and they will chemisorb to form surface states. If the energy of the surface states formed by chemisorption of these intermediates are shallow enough from the delocalized band (conduction band and valence band) edges in the... [Pg.100]

Fig. 24. Energy diagram of the boron-doped diamond/aqueous redox electrolyte solution interface (a) at the flat-band potential (b) at the equilibrium potential of Fe(CN)63, 4 system. Ec is the energy of conduction band bottom, Ev is the energy of valence band top, F is the Fermi level, Eft, is the flat-band potential. Shown are the electrochemical potential levels of the Fe(CN)63, 4 and quinone/hydroquinone (Q/H2Q) systems in solution. The electrode potential axis E is related to the standard hydrogen electrode (SHE). Reprinted from [110]. Copyright (1997), with permission from Elsevier Science. Fig. 24. Energy diagram of the boron-doped diamond/aqueous redox electrolyte solution interface (a) at the flat-band potential (b) at the equilibrium potential of Fe(CN)63, 4 system. Ec is the energy of conduction band bottom, Ev is the energy of valence band top, F is the Fermi level, Eft, is the flat-band potential. Shown are the electrochemical potential levels of the Fe(CN)63, 4 and quinone/hydroquinone (Q/H2Q) systems in solution. The electrode potential axis E is related to the standard hydrogen electrode (SHE). Reprinted from [110]. Copyright (1997), with permission from Elsevier Science.
We may substitute values for InAs from the Solid State Table to obtain 5.8 eV directly, in rough agreement with the observed peak position of 4.5 eV. We shall see soon that the ratio of estimated to observed peak energy is very much the same in tetrahedral solids other than InAs. The discrepancy comes principally from the error in our estimates of the energies of conduction bands. It does not come principally from differences in the splitting at (from accurate band structures) and the observed peak energy. The error in scale will be absorbed in the parameters that will be introduced in the discussion of in Section 4-D. [Pg.107]

We may summarize the LCAO interpretation of the energy bands. Accurate bands were displayed initially in Fig. 6-1. The energy difference between the upper valence bands and the conduction bands that run parallel to them was associated with twice the covalent energy for homopolar semiconductors, or twice the bonding energy 2 Vl -1- in hetcropolar semiconductors. The broadening of those... [Pg.149]

Table 4.22. Optical spectral (one-electron) transition energies ( ) calculated for manganese oxides using the MS-SCF-ATa method, compared with experimentally observed transitions assigned to charge transfer, crystal field, valence band conduction band and crystal field conduction band transitions... Table 4.22. Optical spectral (one-electron) transition energies ( ) calculated for manganese oxides using the MS-SCF-ATa method, compared with experimentally observed transitions assigned to charge transfer, crystal field, valence band conduction band and crystal field conduction band transitions...
The etching of semiconductoi s in the manufacture of computer chips is another important solid-liquid dissolution reaction (see Problem P5-12 and Section. 12.10). The dissolution of the semiconductor MnOj was studied using a number of different acids and salts. The rate of dissolution was found to be a function of the reacting liquid solution redox potential relative to the energy-level conduction band of the semiconductor. It was found that the reaction rate could be increased by a factor of 1CP simply by changing the anion of the acitP From the data below, determine the reaction order and specific reaction rate for the dissolution of MnO, in HBr. [Pg.142]

Energy band Valence band Conduction band Band gap... [Pg.143]

Crystalline nonmetals, such as diamond and phosphorus, are insulators—they do not conduct electricity. The reason for this is that their highest energy electrons occupy filled bands of molecular orbitals that are separated from the lowest empty band (conduction band) by an energy difference called the band gap. In an insulator, this band gap is an energy difference that is too large for electrons to jump to get to the conduction band (Figure 13-35). [Pg.530]

The free electron model attributes the high conductivity of metals to the fact that electrons are delocalized throughout a crystal and that there are unoccupied levels in the energy band. In band theory we have molecular orbitals that cover the entire crystal, and so it seems possible that the electrons in them may be free to move through the crystal. [Pg.97]

Insulator - A material in which the highest occupied energy band (valence band) is completely filled with electrons, while the next higher band (conduction band) is empty. Solids with an energy gap of 5 eV or more are generally considered as insulators at room temperature. Their conductivity is less than 10" S/m and increases with temperature. [Pg.107]

The essence of the necessary conditions requires an infinite stack of planar complexes to be aligned with collinear metal atoms that have a short separation (less than the van der Waal radius). This allows strong interactions within a chain, leading to band formation. For the materials discussed the bands are formed through close approach of the collinear metal atoms. For metallic conduction the bands must be partially occupied (filled bands result in semiconducting and insulating properties). Thus, a chain of metal atoms with an extended filled dz2 orbital may form an electron energy band. This band can be metallic only if it is partially occupied this implies that oxidation or partial oxidation depletes electrons from the dzz band and not from the dxy, dxz, dyz, or dxz-yz orbitals. Thus, two important considerations arise the ability to be oxidized and the orbital from which oxidation occurs. [Pg.43]


See other pages where Energy bands conduction band is mentioned: [Pg.462]    [Pg.12]    [Pg.589]    [Pg.421]    [Pg.27]    [Pg.149]    [Pg.256]    [Pg.256]    [Pg.533]    [Pg.272]    [Pg.3431]    [Pg.482]    [Pg.86]    [Pg.64]    [Pg.394]    [Pg.3430]    [Pg.9]   
See also in sourсe #XX -- [ Pg.15 , Pg.17 , Pg.26 , Pg.28 , Pg.73 ]




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