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Conduction energy band

Allen, A.O.(1976), Drift Mobilities and Conduction Band Energies of Excess Electrons in Dielectric Liquids, NSRDS-NBS 58, National Bureau of Standards, Washington, D.C. [Pg.357]

Fig. 2.3. Schematic view of a porous nanocrystaUine sensing layer with a one-dimensional representation of the energetic conduction band. A inter-grain band bending, eVs, occms as a consequence of smTace phenomena, and a band bending, eVc, occurs at the grain-electrode contact. Eb denotes the minimmn conduction band energy in the bulk tin oxide, and Ep is the Fermi-energy in the electrode metal... Fig. 2.3. Schematic view of a porous nanocrystaUine sensing layer with a one-dimensional representation of the energetic conduction band. A inter-grain band bending, eVs, occms as a consequence of smTace phenomena, and a band bending, eVc, occurs at the grain-electrode contact. Eb denotes the minimmn conduction band energy in the bulk tin oxide, and Ep is the Fermi-energy in the electrode metal...
Fig. 14 (a) Equilibrium energy diagram for a pn junction in an inorganic semiconductor material with intrinsic Fermi energy Ep , conduction band energy E, valence band energy The quantity Vu... [Pg.196]

Figure 6. Calculated changes in the ratios of ionized vacancies to neutral vacancies at 300 and 1400 K. Abbreviations Ev, valence band energy EF, Fermi energy Ec, conduction band energy. (Reproduced with permission from reference 119. Copyright 1981 Academic Press.)... Figure 6. Calculated changes in the ratios of ionized vacancies to neutral vacancies at 300 and 1400 K. Abbreviations Ev, valence band energy EF, Fermi energy Ec, conduction band energy. (Reproduced with permission from reference 119. Copyright 1981 Academic Press.)...
To summarize, the chemistry occurring at the surface of a photo-excited semiconductor is based on the radicals formed from 02, H20, and electron-rich organic compounds. Also note that cations in aqueous solution can be directly reduced by conduction band electrons provided that the redox potentials of these cations are adequate (i.e., lying below the conduction band energy) (6). [Pg.89]

Bottom of Conduction Band ENERGY GAP Top of Valency Band... [Pg.29]

Fig. 10.16. Energy band diagrams for (a) Schottky barrier situation and (b) tunneling situation. CB, conduction-band energy VB, valence-band energy F, Fermi energy level. (Reprinted from A. Gonzalez-Martin, thesis, Texas A M University, 1993.)... Fig. 10.16. Energy band diagrams for (a) Schottky barrier situation and (b) tunneling situation. CB, conduction-band energy VB, valence-band energy F, Fermi energy level. (Reprinted from A. Gonzalez-Martin, thesis, Texas A M University, 1993.)...
Conduction band — Energy band of a solid is an energy interval with a quasicontinuum distribution of allowed energy levels for -> electrons. In a - semiconductor, the lowest unoccupied energy band at T = 0 is denoted conduction band. If the temperature is not zero there is a nonvanishing probability that some electrons will be thermally excited from the - valence band across the energy gap into the lowest unoccupied bands, which are called conduction bands. The thermally excited electrons are conduction electrons. [Pg.110]


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See also in sourсe #XX -- [ Pg.175 , Pg.180 ]




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