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Electronic materials and devices

The scale of components in complex condensed matter often results in structures having a high surface-area-to-volume ratio. In these systems, interfacial effects can be very important. The interfaces between vapor and condensed phases and between two condensed phases have been well studied over the past four decades. These studies have contributed to technologies from electronic materials and devices, to corrosion passivation, to heterogeneous catalysis. In recent years, the focus has broadened to include the interfaces between vapors, liquids, or solids and self-assembled structures of organic, biological, and polymeric nature. [Pg.135]

M. Ohring, Reliability and Failure of Electronic Materials and Devices, Academic Press, San Diego, CA, 1998, Chap. 5. [Pg.330]

Tsai, C. S. and Lee, C. C. (1987). Nondestructive imaging and characterization of electronic materials and devices using scanning acoustic microscopy. In Pattern recognition and acoustical imaging (ed. L. A. Ferrari). SPIE 768,260-6. [ 110,202] Tsukahara, Y. and Ohira, K. (1989). Attenuation measurements in polymer films and coatings by ultrasonic spectroscopy. Ultrasonics Int. 89, 924-9. [204]... [Pg.343]

In the past two decades, the study of the electrical properties of materials has lead to a considerable increase in the understanding of solid state physics and chemistry. This new understanding has lead to the development of new and unusual electronic materials and devices... [Pg.317]

In thin-film processes for the fabrication of electronic materials and devices, rf glow discharges are primarily used. The application of an rf voltage at frequencies between 50 kHz and 40 MHz to a low-pressure (6-600 Pa) gas results in a chemically unique environment (Table I.)... [Pg.388]

Figure 4.5. Comparison of (a) direct bandgap e.g., GaAs) and (b) indirect bandgap e.g.. Si, Ge) materials. Reproduced with permission from Kasap, S. O. Principles of Electronic Materials and Devices, 2nd ed., McGraw-Hill New York, 2002. Figure 4.5. Comparison of (a) direct bandgap e.g., GaAs) and (b) indirect bandgap e.g.. Si, Ge) materials. Reproduced with permission from Kasap, S. O. Principles of Electronic Materials and Devices, 2nd ed., McGraw-Hill New York, 2002.
Kasap, S. O. Principles of Electronic Materials and Devices, 2nd ed., Prentice Hall New Jersey,... [Pg.220]

Production of ultra-pure, submicron-particle-free water, liquid reagents, and gases employed in the processing of electronic materials and devices... [Pg.430]

K. Gamo, S. Namba, in "Ion Beam Processes in Advanc Electronic Materials and Device Technology," ed. B. R. Appleton, F. H. Eisen, T. W. Sigmon, Material Research Soc. Symp. Proc., VoL45, Material Research Soc., Pittsburgh, Penn. 1985, pp.223-234. [Pg.468]

Cab-O-Sil Fumed Silica in Adhesives and Sealants. Cahot Corp. Publication Jun. 1990. McNeilly K, lost EM, Sexton P. Effect of Lubricant Solvent System on Rheological Properties of Silver-Filled Polymers. ISHMProc. Sthintl. Microelectronics Conf. 1994 308-317. Korkin A, Gusev E, Labonowski JK, Luryi S, eds. Nanotechnology for Electronic Materials and Devices. Springer 2007. [Pg.139]

W.R. Silveira, E.M. Muller, T.N. Ng, D.H. Dunlap, and J.A. Marohn, High sensitivity electric force microscopy of organic electronic materials and devices. In Scanning Probe Microscopy Electrical and Electrochemical Phenomena at the Nanoscale ed. S. Kalinin and A. Gruverman, Springer, New York, 2006. [Pg.409]

It is useful to senior scientists such as faculty members and senior engineers at industry, and it will be particularly useful to junior scientists and newcomers such as postdoctoral fellows, graduate students, and undergraduate students to learn the basic knowledge on polymers and electronic materials and devices. We sincerely hope that these young scientists can find new ideas and opportunities from the introduced areas in this book. Limited by our experience and ability, there may be many imperfections and omissions in this book. We will greatly appreciate critical and suggestive comments from the readers. [Pg.378]

Anon, SiC electronic materials and devices, in MRS Bull. 1997, 22, No. 3 (Special Issue) Cree Research Inc., World Patent 91I2S291, Growth of colorless SiC crystals, 1997. [Pg.744]

R. L, Opiia, A. O. Ibidunni, R, L. MaSaitis, A. 3. Davenport, and H. S. Isaacs, Proceedings of the Imernaiional Confwcnce on the Corrosion and Reliability of Electronic Materials and Devices", The Electrochemical Society Meeting, Toronto, Canada, October, 1992. [Pg.288]

Horenstein, M.N. 1996. Microelectronic Circuit and Devices, 2nd ed. Prentice-Hall, Upper Saddle River, NJ. Kasap, S. 2002. Principles Of Electronic Materials And Devices With CD-ROM, 2nd ed. McGraw-HiU, New York. [Pg.545]

Corrosion of Electronic Materials and Devices, J. Sinclair, Ed., PV91-2, The Electrochemical Society, Pennington, NJ, 1991. [Pg.761]


See other pages where Electronic materials and devices is mentioned: [Pg.6]    [Pg.181]    [Pg.335]    [Pg.446]    [Pg.446]    [Pg.446]    [Pg.447]    [Pg.448]    [Pg.448]    [Pg.2]    [Pg.468]    [Pg.215]    [Pg.1909]    [Pg.6151]    [Pg.361]   


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