Electron beam characterized

G Gleitsmann, N Ammann, J Hermans, A Schneider, J Geurts, P Karduk, M Heuken. Comparison between gallium-implanted layers of ZnSe and ZnS Se,- , by optical, electrical and electron-beam characterization methods. J Crystal Growth 138 324-330, 1994. 

In many ways the nanocrystal characterization problem is an ideal one for transmission electron microscopy (TEM). Here, an electron beam is used to image a thin sample in transmission mode [119]. The resolution is a sensitive fimction of the beam voltage and electron optics a low-resolution microscope operating at 100 kV might... 

As mentioned earlier, CL is a powerful tool for the characterization of optical properties of wide band-gap materials, such as diamond, for which optical excitation sources are not readily available. In addition, electron-beam excitation of solids may produce much greater carrier generation rates than typical optical excitation. In such cases, CL microscopy and spectroscopy are valuable methods in identifying various impurities, defects, and their complexes, and in providing a powerful means for the analysis of their distribution, with spatial resolution on the order of 1 pm and less. ... 

Chattopadhyay S., Chaki T.K., and Bhowmick A.K., New thermoplastic elastomers from poly(ethyle-neoctene) (engage), poly(ethylene-vinyl acetate) and low-density polyethylene by electron beam technology structural characterization and mechanical properties. Rubber Chem. TechnoL, 74, 815, 2001. Roy Choudhury N. and Dutta N.K., Thermoplastic elastomeric natural rubber-polypropylene blends with reference to interaction between the components. Advances in Polymer Blends and Alloys Technology, Vol. 5 (K. Finlayson, ed.), Technomic Publishers, Pensylvania, 1994, 161. 

Chattopadhyay, S., Chaki, T.K., Bhowmick, A.K., Gao, G.J.P., and Bandyopadhyay, S., Structural characterization of electron-beam crosslinked thermoplastic elastomeric films from blends of polyethylene and ethylene-vinyl acetate copolymers, J. Appl. Polym. Sci., 81, 1936, 2001. 

On the way to more reliability in device fabrication, Kronholz et al. reported on the reproducible fabrication of protected metal nanoelectrodes on silicon chips with <30nm gap width and their electrochemical characterization [33]. For the fabrication of the chips, an optical lithography step and two electron-beam steps are combined (Figure 18). 

Electron energy loss spectroscopy An analytical technique used to characterize the chemistry, bonding, and electronic structure of thin samples of materials. It is normally performed in a transmission electron microscope. The inelastically scattered electron beams are spectroscopically analyzed to give the energy spectrum of electrons after the interaction. 

Other experiments reported the production of high-energy electrons with a similar set-up, and showed the suitability of such relativistic bunches for nuclear activation techniques. It has been showed that nuclear reactions could be efficiently triggered by electrons from thin CH foil targets [69], and also that nuclear reactions can be a useful tool to characterize the electron beam accelerated with similar targets [70]. This point will be further developed in Sect. 8.4. 

Transmission electron microscopy (TEM) is a powerful and mature microstructural characterization technique. The principles and applications of TEM have been described in many books [16 20]. The image formation in TEM is similar to that in optical microscopy, but the resolution of TEM is far superior to that of an optical microscope due to the enormous differences in the wavelengths of the sources used in these two microscopes. Today, most TEMs can be routinely operated at a resolution better than 0.2 nm, which provides the desired microstructural information about ultrathin layers and their interfaces in OLEDs. Electron beams can be focused to nanometer size, so nanochemical analysis of materials can be performed [21]. These unique abilities to provide structural and chemical information down to atomic-nanometer dimensions make it an indispensable technique in OLED development. However, TEM specimens need to be very thin to make them transparent to electrons. This is one of the most formidable obstacles in using TEM in this field. Current versions of OLEDs are composed of hard glass substrates, soft organic materials, and metal layers. Conventional TEM sample preparation techniques are no longer suitable for these samples [22-24], Recently, these difficulties have been overcome by using the advanced dual beam (DB) microscopy technique, which will be discussed later. 

A family of vacuum-tube MMW sources is based on the propagation of an electron beam through a so-called slow-wave or periodic structure. Radiation propagates on the slow-wave structure at the speed of the electron beam, allowing the beam and radiation field to interact. Devices in this category are the traveling-wave tube (TWT), the backward-wave oscillator (BWO) and the extended interaction oscillator (EIO) klystron. TWTs are characterized by wide bandwidths and intermediate power output. These devices operate well at frequencies up to 100 GHz. BWOs, so called because the radiation within the vacuum tube travels in a direction opposite to that of the electron beam, have very wide bandwidths and low output powers. These sources operate at frequencies up to 1.3 THz and are extensively used in THZ spectroscopic applications [10] [11] [12]. The EIO is a high-power, narrow band tube that has an output power of 1 kW at 95 GHz and about 100 W at 230 GHz. It is available in both oscillator and amplifier, CW and pulsed versions. This source has been extensively used in MMW radar applications with some success [13]. 

---