Electromechanical transistor

Ami S, Joachim C (2001) Logic gates and memory cells based on single C60 electromechanical transistor. Nanotechnology 12 44... 

Fig. 13 (a) Schematic of an electromechanical single molecule transistor, (b) Schematic of the planar version of the Cgo amplifier. (Reprinted with permission from [101])... 

A memory/adder model based on an electromechanical single molecule Cqo transistor... 

Examples of components that do not require CE marking are electromechanical components (relays, microswitches, connectors), active components (transistors, diodes, opto s, ICs), and passive components (capacitors, coils, resistors). 

The technologies used in the first hundred years of the telephone industry were primarily mechanical and electromechanical. Massive amounts of equipment were necessary, a great deal of space was required for central offices, and the speed of transmission was limited. The advent of electronics— primarily the transistor—changed all this, and new technologies continue to he developed. Some of the technologies that have made major differences in most people s lives are the transistor, the integrated circuit, and central office switching. 

Finally, a soft and smart device is fabricated by integrating the IPMC actuator with control and senor units. Recently, organic transistor control and sensor technologies have been developed. Hence, all organic, flexible electromechanical devices can be constructed using the IPMC and an organic transistor. In this chapter, such an example is described as a sheet-type Braille display. 

Carbon nanostructured devices come in different configurations depending on the desired application. The configurations include scaffolds with nanotubes, randomly dispersed nanotubes on then-surfaces, substrates or electrodes consisting of aligned nanotube arrays or forests, probes tipped with individual or bundled nanotubes, transistors made up of a single nanotube or networks of nanotubes, or even three-dimensional nanotube-based electromechanical devices. This section will highlight the different CNT-based device platforms. 

Figure 1.3 The resonant gate field effect transistor, one of the first MEMS devices. A released metal cantilever beam forms the gate electrode over the diffused source-drain channel. The input signal is applied to the input force plate, which causes the cantilever beam to vibrate, modulating the current through the transistor. Maximum vibration occurs at the resonant frequency of the cantilever beam, enabling the device to act as a high-Q electromechanical filter. (Reprinted with permission from IEEE Trans. Electron Devices, The resonant gate transistor, H.C. Nathanson, W.E. Newell, R.A. Wickstrom and J.R. Davis Jr., 1967 IEEE.)...

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