Elastic Electronics industry

EIA Electronic Industries Assoc. FEM flexural elastic modulus... 

The radiation-treated cables find wide applications in control instmmentation of nuclear power reactors, particle accelerators, aviation, and telephone equipments. Usually PE and PVC are radiation cross-linked for production of such cables. The heat shrinkable foils are widely used in packaging, electrical and electronic industries. The radiation cross-linked PE possesses the property of elastic memory which is utilized to produce heat shrinkable products. 

CVD of boron nitride films on silicon or germanium or on printed circuit boards is now a common practice in the electronic industry [154 to 162]. The high thermal conductivity combined with the excellent electrical insulation properties are most valuable for these applications [163] see additional references in Section 4.1.1.10.8, p. 129. The use of a-BN layers is of particular importance in the manufacture of electrophotographic photoreceptors (such as solar cells) and of X-ray lithographic masks (see Section 4.1.1.10.8, p. 129). In the last mentioned application, structural aspects of the deposited films are of importance. In films still containing hydrogen, (N)H moieties are depleted by annealing at about 600°C, while (B)H moieties are depleted above 1000°C [164]. Also, elastic stiffness and thermal expansion of boron nitride films have to be viewed in connection with the temperature-dependent stress of CVD-deposited boron nitride films [165]. Reviews of properties and electronic applications of boron nitride layers have appeared in Polish [166] and Japanese [167]. 

The rapid developments in the microelectronics industry over the last three decades have motivated extensive studies in thin-film semiconductor materials and their implementation in electronic and optoelectronic devices. Semiconductor devices are made by depositing thin single-crystal layers of semiconductor material on the surface of single-crystal substrates. For instance, a common method of manufacturing an MOS (metal-oxide semiconductor) transistor involves the steps of forming a silicon nitride film on a central portion of a P-type silicon substrate. When the film and substrate lattice parameters differ by more than a trivial amount (1 to 2%), the mismatch can be accommodated by elastic strain in the layer as it grows. This is the basis of strained layer heteroepitaxy. 

Syndiotactic polystyrene (sPS) represents an important achievement in olefin polymerization catalysis. Syndiotactic PS is an industrially relevant thermoplastic material produced by Dow Chemical and Idemitsu Kosan Co. under the tradenames Questra and Xarec , respectively. Industrial interest on sPS originates from the remarkable properties exhibited by this highly crystalline polymer. The high melting temperature, 270 °C, the relatively fast crystallization rate (at least much faster than that of iPS), the high heat resistance, the low dielectric constant, the high elastic modulus, and an excellent resistance to chemicals explain the industrial interest for this material. Syndiotactic PS was considered as an innovative new resin option for the automotive, electrical, and electronic markets, appliances such as... 

Chapters 6 and 7 are added in response to the new integration in materials science. In Chapter 6, after the presentation of the main subjects, we give two examples to call attention to readers the fierce competition in industry for the application of liquid crystals crystal paint display and electronic devices. Within the next few years television and computer films will be revolutionalized both in appearance and in function. Military authority and medical industry are both looking for new materials of liquid crystals. The subject rubber elasticity in... 

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