Dopants oxide

Film CAS Registry Number Growth method Possible dopants Oxidizing color shift References... 

The first category includes fluorite-type solid solutions with the formula M02-M 0 or M02-M203 where MOz is the basic oxide and M O and M203 the dopant oxide, with... 

The addition of a dopant oxide gives rise to the creation of oxygen vacancies which are responsible for the ionic conductivity in these materials. Most work... 

Fig. 7.14. Resistivity vs. carrier concentration at 300 K of undoped and doped PLD ZnO thin films on sapphire [56]. The legend gives the maximum concentrations of the dopant oxides in the ZnO targets in weight-%. The optimized ZnO films show lower intrinsic n-type conductivity. For each dopant element, series of films grown at different PLD oxygen pressures are included...

The dopant oxide is used for target preparation and the evaporation temperatures of the dopant elements partially explain the deviations of the transfer factor from 1.0... 

Figure 82 The hole mobility of PMPS doped with PPR, DEH, and TPD versus the dopant oxidation potentials.

These reactions imply that when x moles of dopant oxide are added, Ce sites of CeO are filled with x moles of dopant cation (l ) moles of host... 

Direct gas sources provide an easy way of introducing impurities into a diffusion furnace, and they can be diluted by a carrier gas, (e.g., dopant trihalides or hydrides can be diluted with nitrogen mixed with oxygen). The vapor phase reactions produce on the semiconductor surfaces dopant oxides from which diffusion can occur. 

Organic Conjugated polymers Polymerization conditions Types of heterocycles Additive(s) Side groups Dopant Oxidation state Electrode material Thickness Morphology... 

A number of studies have considered the nature of the PAn conformation in solution as an effect of solvent/dopant/oxidation state. As described in Chapter 5, the PAn can form either tight coils or expanded chains depending on the nature of the solvent used. This behavior is typical of polymers in either poor or good solvents, but has a significant impact on the electrical properties of conjugated polymers, as described in Chapter 5 for PAn. 

Doped zirconia samples. Figures in square brackets refer to the concentration of dopant oxide (mmoloxispecific surface area Sbet (m /g). ... 

To represent the addition of a more positive cation to the ZnO lattice, consider AI2O3 as the dopant oxide. The solution of AI2O3 in ZnO may occur in two ways. 

These perovskite-type oxides are prepared by solid state reaction of cerium dioxide, strontium or barium carbonate and dopant oxide at about... 

The maximum value of conductivity for ceria-based electrolytes is attained at a certain concentration of the dopant oxides, in a matmer similar to the zirconia electrolytes. As shown in fig. 7 (Takahashi and Iwahara 1966), the conductivity of Ce02 doped with... 

Polymerization conditions types of heterocycles additive(s) side groups dopant oxidation state... 

So far we have added a higher valent dopant oxide to Mi.yO. Let us alternatively consider what takes place when a lower valent dopant oxide, MI2O, is added to Mi yO. If the M1+ ions dissolve substitutionally in Mi.yO, the dissolved M1+ ions have one negative effective charge, M/. This wiU be compensated by the formation of positive effective charge or the annihilation of negative effective charge. In our example oxide this will mainly affect electron holes and metal vacancies, and the two defect reactions may thus be written... 

In real cases it may be difficult to reach equilibrium if the diffusion of the cations to and from defect sinks (dislocations, grain boundaries a.o.) is slow. Another point worth mentioning is that the excess second phase may well be a compound of the parent and dopant oxide. For instance, MgO is normally present in excess of the solubility in so-called high-purity alumina (AI2O3) and the second phase in that case is spinel MgAl204. However, this does not alter the oxygen activity dependencies the ternary compound serves as a source/sink for the dopant, with constant activity, and the defect chemical treatment remains essentially the same. 

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