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Distribution surface states

When TBTO is released into ambient water, a considerable proportion becomes adsorbed to sediments, as might be expected from its lipophilicity. Studies have shown that between 10 and 95% of TBTO added to surface waters becomes bound to sediment. In the water column it exists in several different forms, principally the hydroxide, the chloride, and the carbonate (Figure 8.5). Once TBT has been adsorbed, loss is almost entirely due to slow degradation, leading to desorption of diphenyl-tin (DPT). The distribution and state of speciation of TBT can vary considerably between aquatic systems, depending on pH, temperature, salinity, and other factors. [Pg.174]

In this paper, TiCU was oxidized in the flow reactor at various temperature and gas flow rate. The wall scales were characterized by scan electron microscopy and X-ray diffraction. The effects of reactor wall surface state, radial growth of scale layer and reactor axial temperature distribution on scaling formation were discussed. At the same time, the mechanism of scaling on the reactor wall was explored furthermore. [Pg.417]

In order to ameliorate the sharply sloping background obtained in an STS spectrum, the data are often presented as di,/dFh vs. Vb, i.e. the data are either numerically differentiated after collection or Vb has a small modulation applied on top of the ramp, and the differential di,/d Vb is measured directly as a function of Vb. The ripples due to the presence of LDOS are now manifest as clear peaks in the differential plot. dt,/dFb vs. Vb curves are often referred to as conductance plots and directly reflect the spatial distribution of the surface electronic states they may be used to identify the energy of a state and its associated width. If V is the bias potential at which the onset of a ripple in the ijV plot occurs, or the onset of the corresponding peak in the dt/dF plot, then the energy of the localised surface state is e0 x F. Some caution must be exercised in interpreting the differential plots, however, since... [Pg.83]

In cases in which the surface state density is high Nc/i,Nm, Ny/i,Nm - 1), electron distribution in the siuface state conforms to the Fermi function (the state of degeneracy) and the Fermi level is pinned at the surface state level. This is what is called the Fermi level pinning at the surface state. [Pg.42]

The potential i sc of the space charge layer can also be derived as a fixnction of the surface state charge Ou (the surface state density multiplied by the Fermi function). The relationship between of a. and M>sc thus derived can be compared with the relationship between and R (Eqn. 5-67) to obtain, to a first approximation, Eqn. 5-68 for the distribution of the electrode potential in the space charge layer and in the compact layer [Myamlin-Pleskov, 1967 Sato, 1993] ... [Pg.170]

Simple calculation gives a comparable distribution of the electrode potential in the two layers, (64< >h/64( sc) = 1 at the surface state density of about 10cm" that is about one percent of the smface atoms of semiconductors. Figure 5—40 shows the distribution of the electrode potential in the two layers as a function of the surface state density. At a surface state density greater than one percent of the surface atom density, almost all the change of electrode potential occurs in the compact layer, (6A /5d )>l, in the same way as occurs with metal electrodes. Such a state of the semiconductor electrode is called the quasi-metallic state or quasi-metallization of the interface of semiconductor electrodes, which is described in Sec. 5.9 as Fermi level pinning at the surface state of semiconductor electrodes. [Pg.171]

Fig. 6-40. An interfadal potential, distributed to Msc in the space charge layer and to in the compact layer as a function of the concentration of surface states, D . [From Chandrasekaran-Kainthla-Bockris, 1988.]... Fig. 6-40. An interfadal potential, distributed to Msc in the space charge layer and to in the compact layer as a function of the concentration of surface states, D . [From Chandrasekaran-Kainthla-Bockris, 1988.]...
Similar PDOS distribution can be seen on the ZnS surface doped with Fe ions. The dominant state in valence band is Fe (3d) orbital, and the conduction band is composed of S (3p) and Zn (4p) orbital. This result indicates that doping Cu or Fe ions on the ZnS surface reduces the band gap of the ZnS. This kind of reduction will produce lot of surface state in bulk ZnS forbidden band. [Pg.236]

The delta function corresponds to Einstein s equation, which says that the kinetic energy of the emitted electron Ef equals the difference of the photon energy h(a and the energy level of the initial state of the sample, The final state is a plane wave with wave vector k, which represents the electrons emitted in the direction of k. Apparently, the dependence of the matrix element 1 j) on the direction of the exit electron, k, contains information about the angular distribution of the initial state on the sample. For semiconductors and d band metals, the surface states are linear combinations of atomic orbitals. By expressing the atomic orbital in terms of spherical harmonics (Appendix A),... [Pg.106]

What are surface states In an ideal semiconductor, the electron distribution in the conduction band follows Fermi s distribution law and the assumptions behind the deduction is that the conduction electrons are mobile ( free ). In this model, electrons may come to the surface and overlap or underlap a bit, but there are no traps to spoil the sample distribution. [Pg.369]

In a more realistic model, traps (the surface states ) can occur at the semiconductoi/solution interface. What effect this has on the electron distribution depends on the number of traps per unit area. If they cover only 0.1 % of the total surface, the surface states can be neglected because they will not affect the electron distribution. At surface state concentrations of 1% of the surface and higher, there is a strong effect and the electrons that would have been distributed deeply in the bulk of the semiconductor tend to concentrate increasingly at the surface, just as excess electrons put into a metal electrode (taken from it) tend to change its surface concentration of electrons. [Pg.369]

Surface electron states (surface levels) at the interface may also play an important role in the potential distribution between the phases. It should be noted that in considering a solid-liquid interface it would be more correct to speak about interface rather than surface electron states. When using, below, the conventional term surface states, we shall mean by it just interface states. [Pg.268]

The effect of surface states on the potential distribution across the interface can be estimated by the relation... [Pg.269]


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See also in sourсe #XX -- [ Pg.15 , Pg.37 , Pg.73 ]




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State distributions

Surface distribution

Surface states

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