Diode efficiency

Before discussing DLTS, it is appropriate to talk about some device parameters that are affected by these impurities. The main parameters are the recombination and generation lifetimes because they affect junction leakage current, device switching speed, light emitting diode efficiency and a number of other device performance indicators. 

Studies of supramolecular photophysics of selfassembled block copolymers bearing styrene-polyquinoline sequences demonstrated evidence of J-aggregation in well-defined, ordered structures such as micelles and vesicles. The polymers represent a novel class of functional luminescent materials [342]. In a recent contribution, Jenekhe reported a detailed study on voltage-tunable multicolor emission-bilayer LEDs combining PPV (as typical p-type layer) with a series of polyquinolines, polyanthrazolines, polyben-zothiazoles, and a poly(benzimidazobenzophenanthroline) ladder, addressing the influence of the polymer-polymer interface in the diode efficiency and luminance and showing that its electronic structure plays a more important role than the injection barrier at the cathode/polymer interface [343]. 

The diode efficiency can be improved by improving both rjop and t]. As the external medium is generally air, the optical efficiency depends on the refractive index of the active layer, which is almost constant for usual polymers or organic materials. Therefore, can only be improved by an appropriate design of the diode surface to avoid subsequent reflection of the emitted light. On the contrary, rj depends only on the quality of the materials, which are involved in the injection, transport, and recombination processes. The use of nanocomposites can favor these processes by improving the internal efficiency of diodes as follows. 

The high performance of modem spectrographs means that low power lasers can be used as excitation sources. These are typically 10—100-mW devices which are air-cooled and can be operated from 117-V a-c lines. In the green, the Ar" (514.5-nm) laser remains the most popular but is being challenged by the smaller and more efficient frequency doubled Nd YAG (532-nm). In the nir, diode lasers (784-nm) and diode-pumped alexandrite... 

The light source for excitation of Nd YAG lasers may be a pulsed flashlamp for pulsed operation, a continuous-arc lamp for continuous operation, or a semiconductor laser diode, for either pulsed or continuous operation. The use of semiconductor laser diodes as the pump source for sohd-state lasers became common in the early 1990s. A variety of commercial diode-pumped lasers are available. One possible configuration is shown in Figure 8. The output of the diode is adjusted by composition and temperature to be near 810 nm, ie, near the peak of the neodymium absorption. The diode lasers are themselves relatively efficient and the output is absorbed better by the Nd YAG than the light from flashlamps or arc lamps. Thus diode-pumped sohd-state lasers have much higher efficiency than conventionally pumped devices. Correspondingly, there is less heat to remove. Thus diode-pumped sohd-state lasers represent a laser class that is much more compact and efficient than eadier devices. 

The remaining class depicted in Figure 2 is that of soHd-state devices, ie, transistors, various types of semiconductor diode amplifiers, etc. At frequencies below 1 GHz, generation of hundreds or even at the lower frequencies, kilowatts, is feasible by soHd state. Above 1 GHz power capabiHty of soHd-state sources drops. Development of efficient (- 50%) sources at about the 50 W level at S-band (2 GHz) has been demonstrated. It is reasonable to expect soHd-state sources to replace tubes for low frequency and low (<100 W) power appHcations (52). For high power or high frequency, however, tube sources should continue to prevail. 

HgCdTe photodiode performance for the most part depends on high quantum efficiency and low dark current density (83,84) as expressed by equations 23 and 25. Typical values of at 77 K ate shown as a function of cutoff wavelength in Figure 16 (70). HgCdTe diodes sensitive out to a wavelength of 10.5 p.m have shown ideal diffusion current limitation down to 50 K. Values of have exceeded 1 x 10 . Spectral sensitivities for... 

A light-emitting diode (LED) is a forward-biasedp—n junction in which the appHed bias enables the recombination of electrons and holes at the junction, resulting in the emission of photons. This type of light emission resulting from the injection of charged carriers is referred to as electroluminescence. A direct band gap semiconductor is optimal for efficient light emission and thus the majority of the compound semiconductors are potential candidates for efficient LEDs. 

For those applications where high efficiency is important, synchronous rectification may be used on the higher current (power) outputs. Synchronous rectifier circuits are much more complicated than the passive 2-leaded rectifier circuits. These are power MOSFE B, which are utilized in the reverse conduction direction where the anti-parallel intrinsic diode conducts. The MOSFET is turned on whenever the rectifier is required to conduct, thus reducing the forward voltage drop to less than O.f V. Synchronous rectifiers can be used only when the diode current flows in the forward direction, that is in continuousmode forward converters. 

A small Schottky rectifier with a current rating of about 20 to 30 percent of the MOSFET current rating (/d) is placed in parallel with the MOSFET s intrinsic P-N diode. The parallel schottky diode is used to prevent the MOSFET s intrinsic P-N diode from conducting. If it were allowed to conduct, it would exhibit both a higher forward voltage drop and its reverse recovery characteristic. Both can degrade its efficiency of the supply by one to two percent. 

One subtle, but major noise source is the output rectifier. The shape of the reverse recovery characteristic of the rectifiers has a direct affect on the noise generated within the supply. The abruptness or sharpness of the reverse recovery current waveform is often a major source of high-frequency noise. An abrupt recovery diode may need a snubber placed in parallel with it in order to lower its high-frequency spectral characteristics. A snubber will cost the designer in efficiency. Finding a soft recovery rectifier will definitely be an advantage in the design. 

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