Dielectrics aluminium oxide

Concerning the two-layer model, the thickness and properties of each layer depend on the nature of the electrolyte and the anodisation conditions. For the application, a permanent control of thickness and electrical properties is necessary. In the present chapter, electrochemical impedance spectroscopy (EIS) was used to study the film properties. The EIS measurements can provide accurate information on the dielectric properties and the thickness of the barrier layer [13-14]. The porous layer cannot be studied by impedance measurements because of the high conductivity of the electrolyte in the pores [15]. The total thickness of the aluminium oxide films was determined by scanning electron microscopy. The thickness of the single layers was then calculated. The information on the film properties was confirmed by electrical characterisation performed on metal/insulator/metal (MIM) structures. 

Aluminium Oxide Film as Gate Dielectric for Organic FETs ... 

Barrier Aluminium Oxide Fiims as Gate Dielectrics for Organic Transistors... 

The above results showed that an aluminium oxide film with the best dielectric properties was prepared in neutral electrolyte of 0.01 M tartaric acid at low current densities and formation voltages < 30 V. 

The average capacitance and specific resistivity of the barrier aluminium oxide films are determined to be 430. .. 470nF/cm and 1.3. .. 2.4 10 " Qcm, respectively. By using the anodisation factor of 1.2 nm/V for the films formed at low formation voltage, dielectric constants of 5.8. .. 6.4 are calculated from the measured capacitance values. The comparatively low dielectric constant is in agreement with the formation of an amorphous anodic aluminium oxide film as discussed above rather than a crystalline structure for which a higher dielec-... 

The electrical properties of the film were comparable to that of silicon dioxide films. Apparently, the obtained barrier aluminium oxide film can be seen as an excellent gate dielectric for organic field-effect transistors on flexible substrates. 

Bold faced items in Table 1 distinguish the parameters for the high field anodizing mode which was especially developed at to obtain nanoporous aluminium oxide with large D/d ratio. The italics show the literature data, the other data show results obtained in our experiments. Based on the experimental results, the techniques have been designed for fabrication regular nanosized magnetic-anodic dielectric structures. 

An indirect method for moisture content determination uses a capacitor with an aluminium oxide dielectric, designed in such a manner that moisture can easily migrate into and out of the dielectric. The amount of wa-... 

Manufacturers Comments Heat curing. Solvent-free. Aluminium oxide filler. High strength. High thermal conductivity. Excellent electrical and dielectric properties. Low viscosity version of Eccobond A 401. 

Anodising the formation of oxide films on metals by anodic oxidation of the metal in an electrolyte solution. The term can be used for thin dielectric films but is more particularly applied to thicker films formed on some metals such as aluminium at higher anodic voltages. 

Other subjects recently discussed include the photocoabsorption of carbon monoxide and oxygen on ZnO,664 the relative photoabsorption of oxygen and methane over ZnO,665 the photocatalytic properties of ZnO and MgO,66 the effect of irradiation on the dielectric properties of Ti02,667 the photoluminescence of an oxide layer on aluminium,668 the singlet-triplet splitting of the free A-exciton in ZnO,659 the properties of the photosensitive film of copper in iodine solution,580 and the photosensitivity of layers of CuCla and [Fe(ox)8]3-.681... 

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