Dielectric defined

Molar refraction (R) - A property of a dielectric defined by the equation f = V [(m -1)/(m +2)], where n is the index of refraction of the medium (at optical wavelengths) and the molar volume. It is related to the polarizability a of the molecules that make up the medium by the Lorenz-Lorentz equation, R =, where is Avogadro s constant and is the... 

Molar refraction (R) - A property of a dielectric defined by the equation R = (k +2)], where is the index of refraction of the medium (at optical wavelengths) and the molar... 

Mirrors can concentrate light. The complex refractive index of dielectrics defines the absorption coefficient and the normal incidence reflectance of a mirror ... 

This shows that the dielectric constant e of a polar solvent is related to the cavity fimction for two ions at large separations. One could extend this concept to define a local dielectric constant z(r) for the interaction between two ions at small separations. 

Figure Bl.5.5 Schematic representation of the phenomenological model for second-order nonlinear optical effects at the interface between two centrosynnnetric media. Input waves at frequencies or and m2, witii corresponding wavevectors /Cj(co and k (o 2), are approaching the interface from medium 1. Nonlinear radiation at frequency co is emitted in directions described by the wavevectors /c Cco ) (reflected in medium 1) and /c2(k>3) (transmitted in medium 2). The linear dielectric constants of media 1, 2 and the interface are denoted by E2, and s, respectively. The figure shows the vz-plane (the plane of incidence) withz increasing from top to bottom and z = 0 defining the interface.

If the scattering particles are in a dielectric solvent medium with solvent refractive index Uq, we can define the excess... 

On one hand, there are the dielectric properties, which are especially important for polai solvents like water. Bulk properties can, on the other hand, only be modeled by using a supermolecule approach with explicitly defined solvent molecules. 

It is often the case that the solvent acts as a bulk medium, which affects the solute mainly by its dielectric properties. Therefore, as in the case of electrostatic shielding presented above, explicitly defined solvent molecules do not have to be present. In fact, the bulk can be considered as perturbing the molecule in the gas phase , leading to so-called continuum solvent models [14, 15]. To represent the electrostatic contribution to the free energy of solvation, the generalized Bom (GB) method is widely used. Wilhin the GB equation, AG equals the difference between and the vacuum Coulomb energy (Eq. (38)) ... 

Before run ti in g a molecu lar dyn am ics sim ulatioti with solvent and a m olccular median ics meth od, choose the appropriate dielectric con Stan i. You specify th e type an d value of th c dielectric con slari t in thehorce hield Option s dialog box. ITi e dielectric con star t defines the screen irig effect of solvent molecules on nonbonded (electrostalic) in teraction s. 

A. rather complex procedure is used to determine the Born radii a values of which. calculated for each atom in the molecule that carries a charge or a partial charge. T Born radius of an afom (more correctly considered to be an effective Born radii corresponds to the radius that would return the electrostatic energy of the system accordi to the Bom equation if all other atoms in the molecule were uncharged (i.e. if the other ato only acted to define the dielectric boundary between the solute and the solvent). In Sti force field implementation, atomic radii from the OPLS force field are assigned to ec... 

Before running a molecular dynamics simulation with solvent and a molecular mechanics method, choose the appropriate dielectric constant. You specify the type and value of the dielectric constant in the Force Field Options dialog box. The dielectric constant defines the screening effect of solvent molecules on nonbonded (electrostatic) interactions. 

Dielectric Constant. Dielectric constant or specific inductive capacity (SIC) is both defined and measured by the ratio of the electric capacity of a condenser having that material as the dielectric to the capacity of the same condenser having air as the dielectric. The dielectric constant of vacuum is unity. Dry air has a constant slightly higher but for most practical purposes it is considered as unity. 

Dielectric Film Deposition. Dielectric films are found in all VLSI circuits to provide insulation between conducting layers, as diffusion and ion implantation (qv) masks, for diffusion from doped oxides, to cap doped films to prevent outdiffusion, and for passivating devices as a measure of protection against external contamination, moisture, and scratches. Properties that define the nature and function of dielectric films are the dielectric constant, the process temperature, and specific fabrication characteristics such as step coverage, gap-filling capabihties, density stress, contamination, thickness uniformity, deposition rate, and moisture resistance (2). Several processes are used to deposit dielectric films including atmospheric pressure CVD (APCVD), low pressure CVD (LPCVD), or plasma-enhanced CVD (PECVD) (see Plasma technology). 

As with any other fabrication process, masks are needed to define the features to be etched. It is common that the etch used for the semiconductor also etches the masking material. For this reason many different masks are used in etching, including photoresist, dielectric films, and metals. Masking can be a complex issue, especially when very deep etches (>5 fim) are performed with high aspect ratios (148). 

The observed dielectric constant M and the dielectric loss factor k = k tan S are defined by the charge displacement characteristics of the ceramic ie, the movement of charged species within the material in response to the appHed electric field. Discussion of polarization mechanisms is available (1). 

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